Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes

Kang W. Kim, Hyun G. Hong, June O. Song, Joon H. Oh, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on the formation of low-resistance and transparent p-type ohmic contact for green GaN-based light-emitting diodes (LEDs) using Ni-Co solid solution(5 nm)/Au(5 nm) scheme. The as-deposited Ni-Co solid solution(5 nm)/Au(5 nm) contact shows nonlinear current-voltage (I - V) characteristics. However, annealing the sample at 550 {ring operator}C in air results in the formation of ohmic contacts with specific contact resistance of 6.5×10-4 Ω cm2. The annealed sample shows light transmittance of 71.7% at a wavelength of 530 nm, which is better than that (64.9%) of oxidized Ni/Au contacts. Based on Auger electron spectroscopy and x-ray photoemission spectroscopy results, the annealing-induced improvement of the contacts is described and discussed.

Original languageEnglish
Pages (from-to)735-741
Number of pages7
JournalSuperlattices and Microstructures
Volume44
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Ohmic contacts
low resistance
Light emitting diodes
electric contacts
Solid solutions
solid solutions
light emitting diodes
Annealing
Auger electron spectroscopy
Contact resistance
Photoelectron spectroscopy
annealing
contact resistance
X rays
Wavelength
Auger spectroscopy
electron spectroscopy
transmittance
Electric potential
photoelectric emission

Keywords

  • Contact resistivity
  • Green LED
  • Light transmittance
  • Ni-Co solid solution/Au
  • Ohmic contact

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes. / Kim, Kang W.; Hong, Hyun G.; Song, June O.; Oh, Joon H.; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 44, No. 6, 01.12.2008, p. 735-741.

Research output: Contribution to journalArticle

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AU - Hong, Hyun G.

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AU - Oh, Joon H.

AU - Seong, Tae Yeon

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N2 - We report on the formation of low-resistance and transparent p-type ohmic contact for green GaN-based light-emitting diodes (LEDs) using Ni-Co solid solution(5 nm)/Au(5 nm) scheme. The as-deposited Ni-Co solid solution(5 nm)/Au(5 nm) contact shows nonlinear current-voltage (I - V) characteristics. However, annealing the sample at 550 {ring operator}C in air results in the formation of ohmic contacts with specific contact resistance of 6.5×10-4 Ω cm2. The annealed sample shows light transmittance of 71.7% at a wavelength of 530 nm, which is better than that (64.9%) of oxidized Ni/Au contacts. Based on Auger electron spectroscopy and x-ray photoemission spectroscopy results, the annealing-induced improvement of the contacts is described and discussed.

AB - We report on the formation of low-resistance and transparent p-type ohmic contact for green GaN-based light-emitting diodes (LEDs) using Ni-Co solid solution(5 nm)/Au(5 nm) scheme. The as-deposited Ni-Co solid solution(5 nm)/Au(5 nm) contact shows nonlinear current-voltage (I - V) characteristics. However, annealing the sample at 550 {ring operator}C in air results in the formation of ohmic contacts with specific contact resistance of 6.5×10-4 Ω cm2. The annealed sample shows light transmittance of 71.7% at a wavelength of 530 nm, which is better than that (64.9%) of oxidized Ni/Au contacts. Based on Auger electron spectroscopy and x-ray photoemission spectroscopy results, the annealing-induced improvement of the contacts is described and discussed.

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