Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN

June O. Song, Dong Seok Leem, J. S. Kwak, S. N. Lee, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A sodium (Ni)-Lanthanum (La) solid solution (ss) (8 nm)/Au (8 nm) ohmic contact schemes used for the formation of high-quality ohmic contacts to p-GaN were investigated. The formation of the ohmic contacts to p-GaN were investigated using Auger electron spectroscopy and X-ray photoemission spectroscopy. When contacts were annealed at temperature of 350°C-550°C for 1 min in air ambient, an improved current-voltage characteristics was observed. Results show that the temperature dependence of the ohmic properties of the NiLa ss/Au contacts is due to the combined effects of the shift of the surface Fermi level toward the valence-band edge and the formation of conductive oxide.

Original languageEnglish
Pages (from-to)1504-1506
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
Publication statusPublished - 2004 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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