Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN

June O. Song, Dong Seok Leem, J. S. Kwak, S. N. Lee, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A sodium (Ni)-Lanthanum (La) solid solution (ss) (8 nm)/Au (8 nm) ohmic contact schemes used for the formation of high-quality ohmic contacts to p-GaN were investigated. The formation of the ohmic contacts to p-GaN were investigated using Auger electron spectroscopy and X-ray photoemission spectroscopy. When contacts were annealed at temperature of 350°C-550°C for 1 min in air ambient, an improved current-voltage characteristics was observed. Results show that the temperature dependence of the ohmic properties of the NiLa ss/Au contacts is due to the combined effects of the shift of the surface Fermi level toward the valence-band edge and the formation of conductive oxide.

Original languageEnglish
Pages (from-to)1504-1506
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
Publication statusPublished - 2004 Mar 1
Externally publishedYes

Fingerprint

low resistance
lanthanum
electric contacts
solid solutions
Auger spectroscopy
Fermi surfaces
electron spectroscopy
photoelectric emission
sodium
valence
temperature dependence
oxides
shift
air
electric potential
spectroscopy
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN. / Song, June O.; Leem, Dong Seok; Kwak, J. S.; Lee, S. N.; Nam, O. H.; Park, Y.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 84, No. 9, 01.03.2004, p. 1504-1506.

Research output: Contribution to journalArticle

Song, June O. ; Leem, Dong Seok ; Kwak, J. S. ; Lee, S. N. ; Nam, O. H. ; Park, Y. ; Seong, Tae Yeon. / Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN. In: Applied Physics Letters. 2004 ; Vol. 84, No. 9. pp. 1504-1506.
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