Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

June O. Song, Dong Seok Leem, Tae Yeon Seong

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Abstract

The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.

Original languageEnglish
Pages (from-to)4663-4665
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number23
DOIs
Publication statusPublished - 2004 Jun 7
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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