Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.

Original languageEnglish
Pages (from-to)4663-4665
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number23
DOIs
Publication statusPublished - 2004 Jun 7
Externally publishedYes

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low resistance
electric contacts
solid solutions
contact resistance
x ray spectroscopy
photoelectron spectroscopy
air
electric potential
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme. / Song, June O.; Leem, Dong Seok; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 84, No. 23, 07.06.2004, p. 4663-4665.

Research output: Contribution to journalArticle

@article{6166213e04cd4360b79f8f408b202dca,
title = "Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme",
abstract = "The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74{\%} at a wavelength of 470 nm, when annealed at 530 °C in air ambient.",
author = "Song, {June O.} and Leem, {Dong Seok} and Seong, {Tae Yeon}",
year = "2004",
month = "6",
day = "7",
doi = "10.1063/1.1759774",
language = "English",
volume = "84",
pages = "4663--4665",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme

AU - Song, June O.

AU - Leem, Dong Seok

AU - Seong, Tae Yeon

PY - 2004/6/7

Y1 - 2004/6/7

N2 - The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.

AB - The low-resistance and transparent ohmic contacts on p-type GaN, produced using Zn-Ni solid solution/Au scheme, were studied. A comparative study of the An-Ni solid solution/Au schemes with commonly used Ni/Au scheme was also conducted. The current-voltage (I-V) measurements and x-ray photoelectron spectroscopy analysis were performed for the study of the ohmic contacts. Nonlinear I-V characteristics were exhibited by the contacts. It was observed that the contacts showed low specific contact resistances of ∼10 -5 ω cm2 and transparency higher than 74% at a wavelength of 470 nm, when annealed at 530 °C in air ambient.

UR - http://www.scopus.com/inward/record.url?scp=3042596219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042596219&partnerID=8YFLogxK

U2 - 10.1063/1.1759774

DO - 10.1063/1.1759774

M3 - Article

AN - SCOPUS:3042596219

VL - 84

SP - 4663

EP - 4665

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

ER -