Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

Joon Woo Jeon, Sang Youl Lee, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 × 10-4 Ωcm2. Upon annealing at 250 °C for 1 min in N2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 × 10-3 Ωcm2. Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.

Original languageEnglish
Pages (from-to)225-227
Number of pages3
JournalCurrent Applied Physics
Volume12
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Ohmic contacts
low resistance
Light emitting diodes
electric contacts
light emitting diodes
Annealing
electrical resistivity
annealing
Photoelectron spectroscopy
Secondary ion mass spectrometry
X ray spectroscopy
secondary ion mass spectrometry
Electric properties
photoelectric emission
electrical properties
degradation
Degradation
spectroscopy
x rays

Keywords

  • Cr/Al
  • N-polar n-type GaN
  • Ohmic contact
  • Vertical light-emitting diode

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes. / Jeon, Joon Woo; Lee, Sang Youl; Song, June O.; Seong, Tae Yeon.

In: Current Applied Physics, Vol. 12, No. 1, 01.01.2012, p. 225-227.

Research output: Contribution to journalArticle

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