Low resistance CrB2/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes

Seong Han Park, Joon Woo Jeon, Sang Youl Lee, Jihyung Moon, June O. Song, Tae Yeon Seong

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5 Citations (Scopus)


We investigated the effect of a CrB2 interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB 2 (30 nm) /Ti (30 nm) /Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 × 10-4 and 1.99 × 10-4 Ω cm2, respectively. Unlike the Ti/Al contacts, however, the CrB2 /Ti/Al contacts remain ohmic with a contact resistivity of 8.30 × 10-4 cm2 even after annealing at 250°C for 1 min in N2 ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number10
Publication statusPublished - 2010 Aug 24


ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

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