We investigated the effect of a CrB2 interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB 2 (30 nm) /Ti (30 nm) /Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 × 10-4 and 1.99 × 10-4 Ω cm2, respectively. Unlike the Ti/Al contacts, however, the CrB2 /Ti/Al contacts remain ohmic with a contact resistivity of 8.30 × 10-4 cm2 even after annealing at 250°C for 1 min in N2 ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
- Chemical Engineering(all)
- Physical and Theoretical Chemistry