Low resistance CrB2/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes

Seong Han Park, Joon Woo Jeon, Sang Youl Lee, Jihyung Moon, June O. Song, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated the effect of a CrB2 interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB 2 (30 nm) /Ti (30 nm) /Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 × 10-4 and 1.99 × 10-4 Ω cm2, respectively. Unlike the Ti/Al contacts, however, the CrB2 /Ti/Al contacts remain ohmic with a contact resistivity of 8.30 × 10-4 cm2 even after annealing at 250°C for 1 min in N2 ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number10
DOIs
Publication statusPublished - 2010 Aug 24

Fingerprint

Ohmic contacts
low resistance
Light emitting diodes
electric contacts
light emitting diodes
Annealing
electrical resistivity
annealing
Photoelectron spectroscopy
Secondary ion mass spectrometry
X ray spectroscopy
secondary ion mass spectrometry
interlayers
Electric properties
photoelectric emission
examination
electrical properties
spectroscopy
x rays

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Low resistance CrB2/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes. / Park, Seong Han; Jeon, Joon Woo; Lee, Sang Youl; Moon, Jihyung; Song, June O.; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 10, 24.08.2010.

Research output: Contribution to journalArticle

Park, Seong Han ; Jeon, Joon Woo ; Lee, Sang Youl ; Moon, Jihyung ; Song, June O. ; Seong, Tae Yeon. / Low resistance CrB2/Ti/Al ohmic contacts to N-face n-GaN for high power GaN-based vertical light emitting diodes. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 10.
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AU - Song, June O.

AU - Seong, Tae Yeon

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