Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments

Wan Ho Lee, Dong Ho Kim, Dong Ju Chae, Ji Won Yang, Jae In Sim, Yun Mo Sung, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We demonstrate improved electrical and optical properties of indium tin oxide (ITO)/Al reflectors, via SF 6 plasma treatments, for vertical-type GaN light emitting diodes. A 200 nm thick ITO film was deposited and annealed at 650°C to obtain ohmic contacts with p-GaN, after which SF 6 and O 2 plasma were applied on ITO before the Al deposition to effectively increase the work function of ITO and decrease the roughness of the ITO surface. The SF6 plasma-treated ITO/Al reflector showed the lowest specific contact resistance of 9.83× 10 -4 ω cm 2 and the highest reflectance of 91% at 460 nm, compared to as-deposited and O 2 plasma-treated ITO/Al reflectors.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number4
DOIs
Publication statusPublished - 2010 Feb 22

Fingerprint

Ohmic contacts
low resistance
Tin oxides
indium oxides
Indium
tin oxides
electric contacts
reflectance
Plasmas
reflectors
Contact resistance
indium tin oxide
contact resistance
Oxide films
Light emitting diodes
oxide films
Electric properties
light emitting diodes
roughness
Optical properties

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments. / Lee, Wan Ho; Kim, Dong Ho; Chae, Dong Ju; Yang, Ji Won; Sim, Jae In; Sung, Yun Mo; Kim, Tae Geun.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 4, 22.02.2010.

Research output: Contribution to journalArticle

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AU - Lee, Wan Ho

AU - Kim, Dong Ho

AU - Chae, Dong Ju

AU - Yang, Ji Won

AU - Sim, Jae In

AU - Sung, Yun Mo

AU - Kim, Tae Geun

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