Low resistance high reflectance ITO/Al ohmic contacts to p-Type GaN via SF6 plasma treatments

Wan Ho Lee, Dong Ho Kim, Dong Ju Chae, Ji Won Yang, Jae In Sim, Yun Mo Sung, Tae Geun Kim

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We demonstrate improved electrical and optical properties of indium tin oxide (ITO)/Al reflectors, via SF 6 plasma treatments, for vertical-type GaN light emitting diodes. A 200 nm thick ITO film was deposited and annealed at 650°C to obtain ohmic contacts with p-GaN, after which SF 6 and O 2 plasma were applied on ITO before the Al deposition to effectively increase the work function of ITO and decrease the roughness of the ITO surface. The SF6 plasma-treated ITO/Al reflector showed the lowest specific contact resistance of 9.83× 10 -4 ω cm 2 and the highest reflectance of 91% at 460 nm, compared to as-deposited and O 2 plasma-treated ITO/Al reflectors.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number4
Publication statusPublished - 2010 Feb 22


ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

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