Abstract
We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | G65-G67 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2004 |
| Externally published | Yes |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering
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Cite this
Leem, D. S., Song, J. O., Kim, S. H., & Seong, T. Y. (2004). Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN. Electrochemical and Solid-State Letters, 7(4), G65-G67. https://doi.org/10.1149/1.1647471