Abstract
We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.
| Original language | English |
|---|---|
| Journal | Electrochemical and Solid-State Letters |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2004 Apr 14 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrochemistry
- Materials Science(all)
Cite this
Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN. / Leem, Dong Seok; Song, June O.; Kim, Sang Ho; Seong, Tae Yeon.
In: Electrochemical and Solid-State Letters, Vol. 7, No. 4, 14.04.2004.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN
AU - Leem, Dong Seok
AU - Song, June O.
AU - Kim, Sang Ho
AU - Seong, Tae Yeon
PY - 2004/4/14
Y1 - 2004/4/14
N2 - We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.
AB - We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.
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U2 - 10.1149/1.1647471
DO - 10.1149/1.1647471
M3 - Article
VL - 7
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 4
ER -