Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN

Dong Seok Leem; June O. Song; Sang Ho Kim; Tae Yeon Seong

doi:10.1149/1.1647471

Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN

Dong Seok Leem, June O. Song, Sang Ho Kim, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 ¹⁷ cm^-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10^-5 Ω cm² is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.

Original language	English
Pages (from-to)	G65-G67
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	4
DOIs	https://doi.org/10.1149/1.1647471
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN",

abstract = "We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.",

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T1 - Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN

AU - Leem, Dong Seok

AU - Song, June O.

AU - Kim, Sang Ho

AU - Seong, Tae Yeon

PY - 2004

Y1 - 2004

N2 - We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.

AB - We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.

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Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN

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