Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN

Dong Seok Leem, June O. Song, Sang Ho Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

Abstract

We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number4
DOIs
Publication statusPublished - 2004 Apr 14
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
electric contacts
Solid solutions
solid solutions
Auger electron spectroscopy
Contact resistance
Current voltage characteristics
Photoelectron spectroscopy
X ray spectroscopy
Metallizing
contact resistance
Auger spectroscopy
electron spectroscopy
photoelectric emission
Annealing
annealing
air
electric potential
Air

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN. / Leem, Dong Seok; Song, June O.; Kim, Sang Ho; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 4, 14.04.2004.

Research output: Contribution to journalArticle

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