Low Resistance Ni-Mg Solid Solution/Pt Ohmic Contacts to p-Type GaN

Dong Seok Leem, June O. Song, Sang Ho Kim, Tae Yeon Seong

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Abstract

We investigate Ni-Mg solid solution (4 nm)/Pt (6 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN:Mg (5 × 10 17 cm-3). The as-deposited Ni-Mg solid solution/Pt contact reveals nonlinear current-voltage characteristics. Annealing the contacts at 450 and 550°C for 1 min in air ambient, however, improves electrical behaviors significantly. For example, specific contact resistance as low as 6.7 × 10-5 Ω cm2 is obtained, when the contacts are annealed at 450°C. Based on the I-V measurement, Auger electron spectroscopy, and X-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the Ni-Mg solid solution/Pt contacts are discussed.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number4
DOIs
Publication statusPublished - 2004 Apr 14
Externally publishedYes

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ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

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