Abstract
We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 669-672 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 19 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2004 Jun 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN. / Song, June O.; Leem, Dong Seok; Seong, Tae Yeon.
In: Semiconductor Science and Technology, Vol. 19, No. 6, 01.06.2004, p. 669-672.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN
AU - Song, June O.
AU - Leem, Dong Seok
AU - Seong, Tae Yeon
PY - 2004/6/1
Y1 - 2004/6/1
N2 - We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.
AB - We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.
UR - http://www.scopus.com/inward/record.url?scp=2942556704&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2942556704&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/19/6/001
DO - 10.1088/0268-1242/19/6/001
M3 - Article
AN - SCOPUS:2942556704
VL - 19
SP - 669
EP - 672
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 6
ER -