Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN

June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.

Original languageEnglish
Pages (from-to)669-672
Number of pages4
JournalSemiconductor Science and Technology
Volume19
Issue number6
DOIs
Publication statusPublished - 2004 Jun 1
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
electric contacts
Solid solutions
solid solutions
air
Air
electric potential
Contact resistance
Bias voltage
Metallizing
contact resistance
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Annealing
injection
annealing
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN. / Song, June O.; Leem, Dong Seok; Seong, Tae Yeon.

In: Semiconductor Science and Technology, Vol. 19, No. 6, 01.06.2004, p. 669-672.

Research output: Contribution to journalArticle

@article{f1ab121ed4354d28b320b79c343894ff,
title = "Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN",
abstract = "We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.",
author = "Song, {June O.} and Leem, {Dong Seok} and Seong, {Tae Yeon}",
year = "2004",
month = "6",
day = "1",
doi = "10.1088/0268-1242/19/6/001",
language = "English",
volume = "19",
pages = "669--672",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "6",

}

TY - JOUR

T1 - Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN

AU - Song, June O.

AU - Leem, Dong Seok

AU - Seong, Tae Yeon

PY - 2004/6/1

Y1 - 2004/6/1

N2 - We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.

AB - We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.

UR - http://www.scopus.com/inward/record.url?scp=2942556704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942556704&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/19/6/001

DO - 10.1088/0268-1242/19/6/001

M3 - Article

AN - SCOPUS:2942556704

VL - 19

SP - 669

EP - 672

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

ER -