Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN

June O. Song; Dong Seok Leem; Tae Yeon Seong

doi:10.1088/0268-1242/19/6/001

Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN

June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 10¹⁷ cm^-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N₂ ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10^-5 and 4.8 × 10^-5 Ω cm² when annealed in N₂ and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N₂ ambient, respectively.

Original language	English
Pages (from-to)	669-672
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	19
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/19/6/001
Publication status	Published - 2004 Jun
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/19/6/001

Cite this

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title = "Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN",

abstract = "We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.",

author = "Song, {June O.} and Leem, {Dong Seok} and Seong, {Tae Yeon}",

year = "2004",

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T1 - Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN

AU - Song, June O.

AU - Leem, Dong Seok

AU - Seong, Tae Yeon

PY - 2004/6

Y1 - 2004/6

N2 - We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.

AB - We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

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ER -

Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN

Abstract

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