Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaN

June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We have investigated Ni-Zn alloy(5 nm)/Pd(5 nm) metallization schemes for use in forming high-quality ohmic contacts to p-GaN (5 × 1017 cm-3). The as-deposited Ni-Zn alloy/Pd contact exhibits nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at 530°C for 1 min in either air or N2 ambient improves I-V behaviour drastically. It is shown that the contacts produce specific contact resistance of 6.95 × 10-5 and 4.8 × 10-5 Ω cm2 when annealed in N2 and air ambient, respectively. It is further shown that multi-quantum-well light-emitting diodes fabricated with the annealed Ni-Zn alloy/Pd contact layers give a forward-bias voltage of 3.17 and 3.28 V at an injection current of 20 mA when annealed in air and N2 ambient, respectively.

Original languageEnglish
Pages (from-to)669-672
Number of pages4
JournalSemiconductor Science and Technology
Issue number6
Publication statusPublished - 2004 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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