Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN

Dong Ho Kim, Su Jin Kim, Yu Jeong Seo, Tae Geun Kim, Sung Min Hwang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.

Original languageEnglish
Article number161101
JournalApplied Physics Letters
Volume98
Issue number16
DOIs
Publication statusPublished - 2011 Apr 18

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low resistance
electric contacts
annealing
electrical resistivity
metals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN. / Kim, Dong Ho; Kim, Su Jin; Seo, Yu Jeong; Kim, Tae Geun; Hwang, Sung Min.

In: Applied Physics Letters, Vol. 98, No. 16, 161101, 18.04.2011.

Research output: Contribution to journalArticle

Kim, Dong Ho ; Kim, Su Jin ; Seo, Yu Jeong ; Kim, Tae Geun ; Hwang, Sung Min. / Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN. In: Applied Physics Letters. 2011 ; Vol. 98, No. 16.
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