Abstract
The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.
| Original language | English |
|---|---|
| Article number | 161101 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2011 Apr 18 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Kim, D. H., Kim, S. J., Seo, Y. J., Kim, T. G., & Hwang, S. M. (2011). Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN. Applied Physics Letters, 98(16), [161101]. https://doi.org/10.1063/1.3579252