Abstract
The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.
| Original language | English |
|---|---|
| Article number | 161101 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2011 Apr 18 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN. / Kim, Dong Ho; Kim, Su Jin; Seo, Yu Jeong; Kim, Tae Geun; Hwang, Sung Min.
In: Applied Physics Letters, Vol. 98, No. 16, 161101, 18.04.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN
AU - Kim, Dong Ho
AU - Kim, Su Jin
AU - Seo, Yu Jeong
AU - Kim, Tae Geun
AU - Hwang, Sung Min
PY - 2011/4/18
Y1 - 2011/4/18
N2 - The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.
AB - The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.
UR - http://www.scopus.com/inward/record.url?scp=79955399591&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955399591&partnerID=8YFLogxK
U2 - 10.1063/1.3579252
DO - 10.1063/1.3579252
M3 - Article
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
M1 - 161101
ER -