Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN

Dong Ho Kim; Su Jin Kim; Yu Jeong Seo; Tae Geun Kim; Sung Min Hwang

doi:10.1063/1.3579252

Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN

Dong Ho Kim, Su Jin Kim, Yu Jeong Seo, Tae Geun Kim, Sung Min Hwang

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10^-5 whereas that of a typical Ti/Al contact was 1.6× 10^-3 π cm². This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.

Original language	English
Article number	161101
Journal	Applied Physics Letters
Volume	98
Issue number	16
DOIs	https://doi.org/10.1063/1.3579252
Publication status	Published - 2011 Apr 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN",

abstract = "The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.",

author = "Kim, {Dong Ho} and Kim, {Su Jin} and Seo, {Yu Jeong} and Kim, {Tae Geun} and Hwang, {Sung Min}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology, under Project Nos. KRF-2008-D00074 and 2010-00218 (leading foreign research institute recruitment program). This work was also supported by the IT R&D program of MKE/KEIT (Grant No. 2009-F-022-01). ",

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language = "English",

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T1 - Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN

AU - Kim, Dong Ho

AU - Kim, Su Jin

AU - Seo, Yu Jeong

AU - Kim, Tae Geun

AU - Hwang, Sung Min

N1 - Funding Information: This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology, under Project Nos. KRF-2008-D00074 and 2010-00218 (leading foreign research institute recruitment program). This work was also supported by the IT R&D program of MKE/KEIT (Grant No. 2009-F-022-01).

PY - 2011/4/18

Y1 - 2011/4/18

N2 - The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.

AB - The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n -type a -plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 °C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8× 10-5 whereas that of a typical Ti/Al contact was 1.6× 10-3 π cm2. This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a -plane n -type GaN during the annealing process.

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