Low-resistance nonalloyed Ti/Al ohmic contacts on N-face n-type GaN via an O2 plasma treatment

Su Jin Kim, Tae Yang Nam, Tae Geun Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The authors report improved electrical properties of nonalloyed Ti/Al ohmic contact to N-face n-type GaN via oxygen (O2) plasma treatment. The contact resistivity of Ti (50 nm)/ Al (35 nm) electrodes is reduced significantly from 4.3 × 10-1 Ω • cm2 to 2.53 × 10-5 Ω • cm2 by applying O2 plasma to the GaN surface before the Ti/Al deposition. In this process, Ti-N bonds are expected to form, while the Ga-N bonds are broken by the O2 plasma, which eventually increases the nitrogen vacancies as well as the Ti-N phases at the GaN surface. This suggestion has been verified by X-ray photoelectron spectroscopy and transmission electron microscopy analyses.

Original languageEnglish
Article number5667037
Pages (from-to)149-151
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

Keywords

  • GaN
  • N-face
  • ohmic contacts
  • oxygen plasma

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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