Low-resistance nonalloyed Ti/Al ohmic contacts on N-face n-type GaN via an O2 plasma treatment

Su Jin Kim, Tae Yang Nam, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The authors report improved electrical properties of nonalloyed Ti/Al ohmic contact to N-face n-type GaN via oxygen (O2) plasma treatment. The contact resistivity of Ti (50 nm)/ Al (35 nm) electrodes is reduced significantly from 4.3 × 10-1 Ω • cm2 to 2.53 × 10-5 Ω • cm2 by applying O2 plasma to the GaN surface before the Ti/Al deposition. In this process, Ti-N bonds are expected to form, while the Ga-N bonds are broken by the O2 plasma, which eventually increases the nitrogen vacancies as well as the Ti-N phases at the GaN surface. This suggestion has been verified by X-ray photoelectron spectroscopy and transmission electron microscopy analyses.

Original languageEnglish
Article number5667037
Pages (from-to)149-151
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
Publication statusPublished - 2011 Feb


  • GaN
  • N-face
  • ohmic contacts
  • oxygen plasma

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Low-resistance nonalloyed Ti/Al ohmic contacts on N-face n-type GaN via an O<sub>2</sub> plasma treatment'. Together they form a unique fingerprint.

Cite this