Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

Ja Soon Jang, In Sik Chang, Han Ki Kim, Tae Yeon Seong, Seonghoon Lee, Seong Ju Park

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Abstract

We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.

Original languageEnglish
Pages (from-to)70-72
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number1
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Jang, J. S., Chang, I. S., Kim, H. K., Seong, T. Y., Lee, S., & Park, S. J. (1999). Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN. Applied Physics Letters, 74(1), 70-72. https://doi.org/10.1063/1.123954