Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

Ja Soon Jang, In S. Chang, Han K. Kim, Tae Yeon Seong, Seonghoon Lee, Seong J. Park

Research output: Contribution to journalArticle

148 Citations (Scopus)

Abstract

We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.

Original languageEnglish
Pages (from-to)70-72
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number1
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

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low resistance
electric contacts
contact resistance
atmospheres
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jang, J. S., Chang, I. S., Kim, H. K., Seong, T. Y., Lee, S., & Park, S. J. (1999). Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN. Applied Physics Letters, 74(1), 70-72. https://doi.org/10.1063/1.123954

Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN. / Jang, Ja Soon; Chang, In S.; Kim, Han K.; Seong, Tae Yeon; Lee, Seonghoon; Park, Seong J.

In: Applied Physics Letters, Vol. 74, No. 1, 01.12.1999, p. 70-72.

Research output: Contribution to journalArticle

Jang, JS, Chang, IS, Kim, HK, Seong, TY, Lee, S & Park, SJ 1999, 'Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN', Applied Physics Letters, vol. 74, no. 1, pp. 70-72. https://doi.org/10.1063/1.123954
Jang, Ja Soon ; Chang, In S. ; Kim, Han K. ; Seong, Tae Yeon ; Lee, Seonghoon ; Park, Seong J. / Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN. In: Applied Physics Letters. 1999 ; Vol. 74, No. 1. pp. 70-72.
@article{21db4452cf9a4a22a3c71bfb422277df,
title = "Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN",
abstract = "We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.",
author = "Jang, {Ja Soon} and Chang, {In S.} and Kim, {Han K.} and Seong, {Tae Yeon} and Seonghoon Lee and Park, {Seong J.}",
year = "1999",
month = "12",
day = "1",
doi = "10.1063/1.123954",
language = "English",
volume = "74",
pages = "70--72",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

AU - Jang, Ja Soon

AU - Chang, In S.

AU - Kim, Han K.

AU - Seong, Tae Yeon

AU - Lee, Seonghoon

AU - Park, Seong J.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.

AB - We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.

UR - http://www.scopus.com/inward/record.url?scp=0000537361&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000537361&partnerID=8YFLogxK

U2 - 10.1063/1.123954

DO - 10.1063/1.123954

M3 - Article

VL - 74

SP - 70

EP - 72

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -