Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

Ja Soon Jang; In Sik Chang; Han Ki Kim; Tae Yeon Seong; Seonghoon Lee; Seong Ju Park

doi:10.1063/1.123954

Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

Ja Soon Jang, In Sik Chang, Han Ki Kim, Tae Yeon Seong, Seonghoon Lee, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

158 Citations (Scopus)

Abstract

We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×10¹⁷ cm^-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10^-4 cm² when annealed at 350 °C for 1 min in a flowing N₂ atmosphere.

Original language	English
Pages (from-to)	70-72
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	1
DOIs	https://doi.org/10.1063/1.123954
Publication status	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.123954

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title = "Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN",

abstract = "We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.",

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T1 - Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

AU - Jang, Ja Soon

AU - Chang, In Sik

AU - Kim, Han Ki

AU - Seong, Tae Yeon

AU - Lee, Seonghoon

AU - Park, Seong Ju

PY - 1999

Y1 - 1999

N2 - We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.

AB - We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.

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EP - 72

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

Abstract

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