Abstract
A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.
Original language | English |
---|---|
Pages (from-to) | 1710-1712 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2004 Mar 8 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)