Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Han Ki Kim; Tae Yeon Seong; Ilesanmi Adesida; Chak Wah Tang; Kei May Lau

doi:10.1063/1.1668331

Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Han Ki Kim, Tae Yeon Seong, Ilesanmi Adesida, Chak Wah Tang, Kei May Lau

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 ^-4 ω cm² when annealed at 600 °C for 1 min in a flowing N₂ atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.

Original language	English
Pages (from-to)	1710-1712
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	10
DOIs	https://doi.org/10.1063/1.1668331
Publication status	Published - 2004 Mar 8
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN",

abstract = "A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.",

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T1 - Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

AU - Kim, Han Ki

AU - Seong, Tae Yeon

AU - Adesida, Ilesanmi

AU - Tang, Chak Wah

AU - Lau, Kei May

PY - 2004/3/8

Y1 - 2004/3/8

N2 - A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.

AB - A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.

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U2 - 10.1063/1.1668331

DO - 10.1063/1.1668331

M3 - Article

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EP - 1712

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Abstract

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