Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Han Ki Kim; Tae Yeon Seong; Ilesanmi Adesida; Chak Wah Tang; Kei May Lau

doi:10.1063/1.1668331

Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Han Ki Kim, Tae Yeon Seong, Ilesanmi Adesida, Chak Wah Tang, Kei May Lau

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 ^-4 ω cm² when annealed at 600 °C for 1 min in a flowing N₂ atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.

Original language	English
Pages (from-to)	1710-1712
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	10
DOIs	https://doi.org/10.1063/1.1668331
Publication status	Published - 2004 Mar 8

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kim, H. K., Seong, T. Y., Adesida, I., Tang, C. W., & Lau, K. M. (2004). Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. Applied Physics Letters, 84(10), 1710-1712. https://doi.org/10.1063/1.1668331

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abstract = "A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.",

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AU - Kim, Han Ki

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AU - Tang, Chak Wah

AU - Lau, Kei May

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AB - A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.

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