A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm2 when annealed at 600 °C for 1 min in a flowing N2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)