Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Han Ki Kim, Tae Yeon Seong, Ilesanmi Adesida, Chak Wah Tang, Kei May Lau

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm 2 when annealed at 600 °C for 1 min in a flowing N 2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.

Original languageEnglish
Pages (from-to)1710-1712
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number10
Publication statusPublished - 2004 Mar 8
Externally publishedYes

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low resistance
electric contacts
x ray spectroscopy
Auger spectroscopy
electron spectroscopy
photoelectron spectroscopy
atmospheres
electrical resistivity
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, H. K., Seong, T. Y., Adesida, I., Tang, C. W., & Lau, K. M. (2004). Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. Applied Physics Letters, 84(10), 1710-1712.

Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. / Kim, Han Ki; Seong, Tae Yeon; Adesida, Ilesanmi; Tang, Chak Wah; Lau, Kei May.

In: Applied Physics Letters, Vol. 84, No. 10, 08.03.2004, p. 1710-1712.

Research output: Contribution to journalArticle

Kim, HK, Seong, TY, Adesida, I, Tang, CW & Lau, KM 2004, 'Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN', Applied Physics Letters, vol. 84, no. 10, pp. 1710-1712.
Kim HK, Seong TY, Adesida I, Tang CW, Lau KM. Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. Applied Physics Letters. 2004 Mar 8;84(10):1710-1712.
Kim, Han Ki ; Seong, Tae Yeon ; Adesida, Ilesanmi ; Tang, Chak Wah ; Lau, Kei May. / Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. In: Applied Physics Letters. 2004 ; Vol. 84, No. 10. pp. 1710-1712.
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