Abstract
A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm 2 when annealed at 600 °C for 1 min in a flowing N 2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 1710-1712 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 10 |
| Publication status | Published - 2004 Mar 8 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. / Kim, Han Ki; Seong, Tae Yeon; Adesida, Ilesanmi; Tang, Chak Wah; Lau, Kei May.
In: Applied Physics Letters, Vol. 84, No. 10, 08.03.2004, p. 1710-1712.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN
AU - Kim, Han Ki
AU - Seong, Tae Yeon
AU - Adesida, Ilesanmi
AU - Tang, Chak Wah
AU - Lau, Kei May
PY - 2004/3/8
Y1 - 2004/3/8
N2 - A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm 2 when annealed at 600 °C for 1 min in a flowing N 2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.
AB - A Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg was analyzed. The annealed Pt/Pd/Au contact exhibited linear current-voltage characteristics. It was shown that the Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1×10 -4 ω cm 2 when annealed at 600 °C for 1 min in a flowing N 2 atmosphere. A preliminary explanation for ohmic contact formation was described using Auger electron spectroscopy and x-ray photoelectron spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=1842476914&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1842476914&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:1842476914
VL - 84
SP - 1710
EP - 1712
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
ER -