We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(n d=2 × 10 17 cm -3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10 -4 Ω cm 2 when annealed at 300°C for 1 min in a N 2 atmosphere.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2000 Sep 11|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)