Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

Han Ki Kim, Sang Heon Han, Tae Yeon Seong, Won Kook Choi

Research output: Contribution to journalArticle

121 Citations (Scopus)

Abstract

We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(n d=2 × 10 17 cm -3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10 -4 Ω cm 2 when annealed at 300°C for 1 min in a N 2 atmosphere.

Original languageEnglish
Pages (from-to)1647-1649
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number11
Publication statusPublished - 2000 Sep 11
Externally publishedYes

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low resistance
electric contacts
contact resistance
atmospheres
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, H. K., Han, S. H., Seong, T. Y., & Choi, W. K. (2000). Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers. Applied Physics Letters, 77(11), 1647-1649.

Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers. / Kim, Han Ki; Han, Sang Heon; Seong, Tae Yeon; Choi, Won Kook.

In: Applied Physics Letters, Vol. 77, No. 11, 11.09.2000, p. 1647-1649.

Research output: Contribution to journalArticle

Kim, HK, Han, SH, Seong, TY & Choi, WK 2000, 'Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers', Applied Physics Letters, vol. 77, no. 11, pp. 1647-1649.
Kim, Han Ki ; Han, Sang Heon ; Seong, Tae Yeon ; Choi, Won Kook. / Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers. In: Applied Physics Letters. 2000 ; Vol. 77, No. 11. pp. 1647-1649.
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