Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

Han Ki Kim, Sang Heon Han, Tae Yeon Seong, Won Kook Choi

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Abstract

We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(n d=2 × 10 17 cm -3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed, The Ti/Au scheme produces a specific contact resistance of 2 × 10 -4 Ω cm 2 when annealed at 300°C for 1 min in a N 2 atmosphere.

Original languageEnglish
Pages (from-to)1647-1649
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number11
Publication statusPublished - 2000 Sep 11
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, H. K., Han, S. H., Seong, T. Y., & Choi, W. K. (2000). Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers. Applied Physics Letters, 77(11), 1647-1649.