Low temperature (≤ 380°C) and high performance Ge CMOS technology with novel source/drain by metal-induced dopants activation and HighFK/Metal gate stack for Monolithic 3D integration
Jin Hong Park, Munehiro Tada, Duygu Kuzum, Pawan Kapur, Hyun Yong Yu, H. S.Philip Wong, Krishna C. Saraswat
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Fingerprint
Dive into the research topics of 'Low temperature (≤ 380°C) and high performance Ge CMOS technology with novel source/drain by metal-induced dopants activation and HighFK/Metal gate stack for Monolithic 3D integration'. Together they form a unique fingerprint.