TY - GEN
T1 - Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits
AU - Han, Hoonhee
AU - Choi, Rino
AU - Jung, Seong Ook
AU - Chung, Sung Woo
AU - Cho, Byung Jin
AU - Song, S. C.
AU - Choi, Changhwan
N1 - Funding Information:
This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of science, ICT & Future Planning (NRF-2015M3A7B7045490, NRF-2020M3F3A2A02082449) as well as Qualcomm Technology Inc.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/12/12
Y1 - 2020/12/12
N2 - We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.
AB - We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.
UR - http://www.scopus.com/inward/record.url?scp=85102961994&partnerID=8YFLogxK
U2 - 10.1109/IEDM13553.2020.9372102
DO - 10.1109/IEDM13553.2020.9372102
M3 - Conference contribution
AN - SCOPUS:85102961994
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 15.6.1-15.6.4
BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Y2 - 12 December 2020 through 18 December 2020
ER -