Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization

Jin Hong Park, M. Tada, H. Y. Yu, D. Kuzum, Y. Na, K. C. Saraswat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages909-916
Number of pages8
Edition10
DOIs
Publication statusPublished - 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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    Park, J. H., Tada, M., Yu, H. Y., Kuzum, D., Na, Y., & Saraswat, K. C. (2008). Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 909-916). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986852