Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization

Jin Hong Park, M. Tada, Hyun-Yong Yu, D. Kuzum, Y. Na, K. C. Saraswat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.

Original languageEnglish
Title of host publicationECS Transactions
Pages909-916
Number of pages8
Volume16
Edition10
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

Fingerprint

Germanium
Boron
Crystallization
Chemical activation
Temperature
Atoms
Electrodes
Three dimensional integrated circuits

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. / Park, Jin Hong; Tada, M.; Yu, Hyun-Yong; Kuzum, D.; Na, Y.; Saraswat, K. C.

ECS Transactions. Vol. 16 10. ed. 2008. p. 909-916.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, JH, Tada, M, Yu, H-Y, Kuzum, D, Na, Y & Saraswat, KC 2008, Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. in ECS Transactions. 10 edn, vol. 16, pp. 909-916, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.2986852
Park, Jin Hong ; Tada, M. ; Yu, Hyun-Yong ; Kuzum, D. ; Na, Y. ; Saraswat, K. C. / Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization. ECS Transactions. Vol. 16 10. ed. 2008. pp. 909-916
@inproceedings{68a689f2a6c34e1ea21a755185a1f749,
title = "Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization",
abstract = "In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.",
author = "Park, {Jin Hong} and M. Tada and Hyun-Yong Yu and D. Kuzum and Y. Na and Saraswat, {K. C.}",
year = "2008",
month = "12",
day = "1",
doi = "10.1149/1.2986852",
language = "English",
isbn = "9781566776561",
volume = "16",
pages = "909--916",
booktitle = "ECS Transactions",
edition = "10",

}

TY - GEN

T1 - Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization

AU - Park, Jin Hong

AU - Tada, M.

AU - Yu, Hyun-Yong

AU - Kuzum, D.

AU - Na, Y.

AU - Saraswat, K. C.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.

AB - In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.

UR - http://www.scopus.com/inward/record.url?scp=63149194923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149194923&partnerID=8YFLogxK

U2 - 10.1149/1.2986852

DO - 10.1149/1.2986852

M3 - Conference contribution

SN - 9781566776561

VL - 16

SP - 909

EP - 916

BT - ECS Transactions

ER -