Low temperature characterization of 14nm FDSOI CMOS devices

M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, Gyu-Tae Kim, G. Ghibaudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility clearly indicates that, for long devices, it is limited by phonon scatterings whereas, for sub 100nm gate lengths, the mobility is significantly degraded and almost independent with temperature. This feature is attributed to scattering by neutral defects, which are originated from source and drain process and extending over several tens of nm along the channel.

Original languageEnglish
Title of host publication2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
PublisherIEEE Computer Society
Pages29-32
Number of pages4
ISBN (Print)9781479948420
DOIs
Publication statusPublished - 2014 Jan 1
Event11th International Workshop on Low Temperature Electronics, WOLTE 2014 - Grenoble, France
Duration: 2014 Jul 72014 Jul 9

Other

Other11th International Workshop on Low Temperature Electronics, WOLTE 2014
CountryFrance
CityGrenoble
Period14/7/714/7/9

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shin, M., Shi, M., Mouis, M., Cros, A., Josse, E., Kim, G-T., & Ghibaudo, G. (2014). Low temperature characterization of 14nm FDSOI CMOS devices. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014 (pp. 29-32). [6881018] IEEE Computer Society. https://doi.org/10.1109/WOLTE.2014.6881018