TY - GEN
T1 - Low temperature characterization of 14nm FDSOI CMOS devices
AU - Shin, M.
AU - Shi, M.
AU - Mouis, M.
AU - Cros, A.
AU - Josse, E.
AU - Kim, G. T.
AU - Ghibaudo, G.
PY - 2014
Y1 - 2014
N2 - A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility clearly indicates that, for long devices, it is limited by phonon scatterings whereas, for sub 100nm gate lengths, the mobility is significantly degraded and almost independent with temperature. This feature is attributed to scattering by neutral defects, which are originated from source and drain process and extending over several tens of nm along the channel.
AB - A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility clearly indicates that, for long devices, it is limited by phonon scatterings whereas, for sub 100nm gate lengths, the mobility is significantly degraded and almost independent with temperature. This feature is attributed to scattering by neutral defects, which are originated from source and drain process and extending over several tens of nm along the channel.
KW - FDSOI
KW - Low temperature characterization
KW - Mobility
KW - parameters
UR - http://www.scopus.com/inward/record.url?scp=84906729310&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906729310&partnerID=8YFLogxK
U2 - 10.1109/WOLTE.2014.6881018
DO - 10.1109/WOLTE.2014.6881018
M3 - Conference contribution
AN - SCOPUS:84906729310
SN - 9781479948420
T3 - 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
SP - 29
EP - 32
BT - 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
PB - IEEE Computer Society
T2 - 11th International Workshop on Low Temperature Electronics, WOLTE 2014
Y2 - 7 July 2014 through 9 July 2014
ER -