Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions

Minju Shin, Ming Shi, Mireille Mouis, Antoine Cros, Emmanuel Josse, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this work, we demonstrate the powerful methodology of electronic transport characterization in highly scaled (down to 14 nm-node) FDSOI CMOS devices using cryogenic operation under interface coupling measurement condition. Thanks to this approach, the underlying scattering mechanisms were revealed in terms of their origin and diffusion center location. At first we study quantitatively transport behavior induced by the high-k/metal gate stack in long channel case, and then we investigate the transport properties evolution in highly scaled devices. Mobility degradation in short devices is shown to stem from additional scattering mechanisms, unlike long channel devices, which are attributed to process-induced defects near source and drain region. Especially in PMOS devices, channel-material related defects which could be denser close to front interface also induce mobility degradation.

Original languageEnglish
Pages (from-to)30-35
Number of pages6
JournalSolid-State Electronics
Volume108
DOIs
Publication statusPublished - 2015

Keywords

  • Electronics transport
  • Interface coupling measurement
  • Low temperature characterization
  • UTBB FD-SOI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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