Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

M. Shin; M. Shi; M. Mouis; A. Cros; E. Josse; G. T. Kim; G. Ghibaudo

doi:10.1109/ULIS.2014.6813906

Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, G. T. Kim, G. Ghibaudo

Research output: Contribution to conference › Paper › peer-review

4 Citations (Scopus)

Abstract

In this work, we demonstrate the powerful methodology of electronic transport characterization in UTBB FD-SOI devices using cryogenic operation under interface coupling measurement condition. At first we study quantitatively the high-k/metal gate stack-induced transport behavior in long channel case, and, then we investigate the transport properties evolution in highly scaled devices. Mobility degradation in short devices is shown to stem from additional scattering mechanism, unlike long channel devices, which are attributed to process-induced defects near source and drain region.

Original language	English
Pages	61-64
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2014.6813906
Publication status	Published - 2014
Event	2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden Duration: 2014 Apr 7 → 2014 Apr 9

Other

Other	2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014
Country/Territory	Sweden
City	Stockholm
Period	14/4/7 → 14/4/9

Keywords

Electronics transport
Interface coupling measurement
Low temperature characterization
UTBB FD-SOI

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ULIS.2014.6813906

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Shin, M, Shi, M, Mouis, M, Cros, A, Josse, E, Kim, GT & Ghibaudo, G 2014, 'Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions', Paper presented at 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014, Stockholm, Sweden, 14/4/7 - 14/4/9 pp. 61-64. https://doi.org/10.1109/ULIS.2014.6813906

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keywords = "Electronics transport, Interface coupling measurement, Low temperature characterization, UTBB FD-SOI",

author = "M. Shin and M. Shi and M. Mouis and A. Cros and E. Josse and Kim, {G. T.} and G. Ghibaudo",

note = "Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 ; Conference date: 07-04-2014 Through 09-04-2014",

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doi = "10.1109/ULIS.2014.6813906",

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AU - Cros, A.

AU - Josse, E.

AU - Kim, G. T.

AU - Ghibaudo, G.

PY - 2014

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AB - In this work, we demonstrate the powerful methodology of electronic transport characterization in UTBB FD-SOI devices using cryogenic operation under interface coupling measurement condition. At first we study quantitatively the high-k/metal gate stack-induced transport behavior in long channel case, and, then we investigate the transport properties evolution in highly scaled devices. Mobility degradation in short devices is shown to stem from additional scattering mechanism, unlike long channel devices, which are attributed to process-induced defects near source and drain region.

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T2 - 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014

Y2 - 7 April 2014 through 9 April 2014

ER -

Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

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