Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, Gyu-Tae Kim, G. Ghibaudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this work, we demonstrate the powerful methodology of electronic transport characterization in UTBB FD-SOI devices using cryogenic operation under interface coupling measurement condition. At first we study quantitatively the high-k/metal gate stack-induced transport behavior in long channel case, and, then we investigate the transport properties evolution in highly scaled devices. Mobility degradation in short devices is shown to stem from additional scattering mechanism, unlike long channel devices, which are attributed to process-induced defects near source and drain region.

Original languageEnglish
Title of host publicationULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon
PublisherIEEE Computer Society
Pages61-64
Number of pages4
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden
Duration: 2014 Apr 72014 Apr 9

Other

Other2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014
CountrySweden
CityStockholm
Period14/4/714/4/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Shin, M., Shi, M., Mouis, M., Cros, A., Josse, E., Kim, G-T., & Ghibaudo, G. (2014). Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions. In ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon (pp. 61-64). [6813906] IEEE Computer Society. https://doi.org/10.1109/ULIS.2014.6813906