Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

Jong Hyun Kim, Sang Hyo Kweon, Sahn Nahm

Research output: Contribution to journalArticle

Abstract

A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)2559-2567
Number of pages9
JournalNano Research
Volume12
Issue number10
DOIs
Publication statusPublished - 2019 Oct 1

Fingerprint

Flexible electronics
Nanosheets
Perovskite
Lead
Crystalline materials
Thin films
Substrates
Polyimides
Seed
Oxygen vacancies
Leakage currents
Temperature
Electric properties
Ferroelectric materials
perovskite
Monolayers
Polymers
Permittivity
Current density
Oxygen

Keywords

  • 2D nanosheet seed-layers
  • lead-free piezoelectric thin films
  • low-temperature-deposition process
  • polymer substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications. / Kim, Jong Hyun; Kweon, Sang Hyo; Nahm, Sahn.

In: Nano Research, Vol. 12, No. 10, 01.10.2019, p. 2559-2567.

Research output: Contribution to journalArticle

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AB - A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].

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