TY - JOUR
T1 - Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications
AU - Kim, Jong Hyun
AU - Kweon, Sang Hyo
AU - Nahm, Sahn
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University.
Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University.
PY - 2019/10/1
Y1 - 2019/10/1
N2 - A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].
AB - A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].
KW - 2D nanosheet seed-layers
KW - lead-free piezoelectric thin films
KW - low-temperature-deposition process
KW - polymer substrates
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U2 - 10.1007/s12274-019-2486-5
DO - 10.1007/s12274-019-2486-5
M3 - Article
AN - SCOPUS:85073485109
VL - 12
SP - 2559
EP - 2567
JO - Nano Research
JF - Nano Research
SN - 1998-0124
IS - 10
ER -