Abstract
A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].
| Original language | English |
|---|---|
| Pages (from-to) | 2559-2567 |
| Number of pages | 9 |
| Journal | Nano Research |
| Volume | 12 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2019 Oct 1 |
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Keywords
- 2D nanosheet seed-layers
- lead-free piezoelectric thin films
- low-temperature-deposition process
- polymer substrates
ASJC Scopus subject areas
- Materials Science(all)
- Electrical and Electronic Engineering
Cite this
Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications. / Kim, Jong Hyun; Kweon, Sang Hyo; Nahm, Sahn.
In: Nano Research, Vol. 12, No. 10, 01.10.2019, p. 2559-2567.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications
AU - Kim, Jong Hyun
AU - Kweon, Sang Hyo
AU - Nahm, Sahn
PY - 2019/10/1
Y1 - 2019/10/1
N2 - A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].
AB - A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].
KW - 2D nanosheet seed-layers
KW - lead-free piezoelectric thin films
KW - low-temperature-deposition process
KW - polymer substrates
UR - http://www.scopus.com/inward/record.url?scp=85073485109&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073485109&partnerID=8YFLogxK
U2 - 10.1007/s12274-019-2486-5
DO - 10.1007/s12274-019-2486-5
M3 - Article
AN - SCOPUS:85073485109
VL - 12
SP - 2559
EP - 2567
JO - Nano Research
JF - Nano Research
SN - 1998-0124
IS - 10
ER -