Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

Jong Hyun Kim; Sang Hyo Kweon; Sahn Nahm

doi:10.1007/s12274-019-2486-5

Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

Jong Hyun Kim, Sang Hyo Kweon, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A monolayer of Sr₂Nb₃O₁₀ (SNO) is deposited on the Pt/Ti/SiO₂/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na_1−xK_x)NbO₃ (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV⁻¹, and a leakage current density of 6.47 × 10⁻⁷ Acm⁻² at −0.2 MV·cm⁻¹. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	2559-2567
Number of pages	9
Journal	Nano Research
Volume	12
Issue number	10
DOIs	https://doi.org/10.1007/s12274-019-2486-5
Publication status	Published - 2019 Oct 1

Keywords

2D nanosheet seed-layers
lead-free piezoelectric thin films
low-temperature-deposition process
polymer substrates

ASJC Scopus subject areas

Materials Science(all)
Electrical and Electronic Engineering

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10.1007/s12274-019-2486-5

Cite this

@article{e83fb836552d43ef9a4fa70ff1804e31,

title = "Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications",

abstract = "A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].",

keywords = "2D nanosheet seed-layers, lead-free piezoelectric thin films, low-temperature-deposition process, polymer substrates",

author = "Kim, {Jong Hyun} and Kweon, {Sang Hyo} and Sahn Nahm",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} 2019, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2019",

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doi = "10.1007/s12274-019-2486-5",

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journal = "Nano Research",

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T1 - Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

AU - Kim, Jong Hyun

AU - Kweon, Sang Hyo

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: © 2019, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

PY - 2019/10/1

Y1 - 2019/10/1

N2 - A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].

AB - A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1−xKx)NbO3 (NKN) film at 350 °C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 °C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV−1, and a leakage current density of 6.47 × 10−7 Acm−2 at −0.2 MV·cm−1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 °C. Hence, the NKN films grown on the SNO seed-layer at 350 °C can be applied to electronic devices with flexible polymer substrates. [Figure not available: see fulltext.].

KW - 2D nanosheet seed-layers

KW - lead-free piezoelectric thin films

KW - low-temperature-deposition process

KW - polymer substrates

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U2 - 10.1007/s12274-019-2486-5

DO - 10.1007/s12274-019-2486-5

M3 - Article

AN - SCOPUS:85073485109

VL - 12

SP - 2559

EP - 2567

JO - Nano Research

JF - Nano Research

SN - 1998-0124

IS - 10

ER -

Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

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Keywords

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