Low-temperature crystallization of sol-gel derived PbZr 0.52Ti 0.48O 3 thin films with a vanadium additive

Min Gyu Kang, Seung Min Oh, Kwang Hwan Cho, Young Ho Do, Dong Soo Paik, Bong Hee Cho, Chong Yun Kang, Sahn Nahm, Seok Jin Yoon

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5 Citations (Scopus)


Low-temperature-crystallized PbZr 0.52Ti 0.48O 3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450°C, and remarkable electrical properties such as a remnant polarization of 4.3 μCcm 2, a coercive field of 49.3 kVcm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5 were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications.

Original languageEnglish
Pages (from-to)D9-D12
JournalJournal of the Electrochemical Society
Issue number1
Publication statusPublished - 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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