Low temperature direct bonding method using an electron-beam evaporated silicon-oxide interlayer

H. W. Park, B. K. Ju, Y. H. Lee, J. H. Park, N. Y. Lee, K. H. Koh, D. K. Shin, I. B. Kang, N. Samaan, M. R. Haskard, M. H. Oh

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

In this work, we proposed a direct bonding method using interlayers for single crystalline silicon wafers and glass wafers. Various materials were used for interlayers of thermal oxide, sputtered nitride, electron-beam(E-beam) evaporated silicon oxide and molybdenum. After hydrophilization, samples were spin dried and mated together without external forces. Three types of solutions were used for hydrophilizing the samples. Changes of average surface roughness after hydrophilization of the single crystalline silicon wafer, thermal oxide and E-beam silicon-oxide were inspected using atomic force microscope(AFM). Bonding interfaces of the bonded pairs were observed by scanning electron microscope(SEM). Voids and non-contact areas of the bonding pairs were also inspected using infrared(IR) transmission microscope. Surface energy, tensile strength measurements and breaking tests were also done.

Original languageEnglish
Pages (from-to)167-172
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume444
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Park, H. W., Ju, B. K., Lee, Y. H., Park, J. H., Lee, N. Y., Koh, K. H., Shin, D. K., Kang, I. B., Samaan, N., Haskard, M. R., & Oh, M. H. (1997). Low temperature direct bonding method using an electron-beam evaporated silicon-oxide interlayer. Materials Research Society Symposium - Proceedings, 444, 167-172.