Low temperature epoxy bonding for wafer level MEMS packaging

Yong Kook Kim; Eun Kyung Kim; Soo Won Kim; Byeong Kwon Ju

doi:10.1016/j.sna.2007.10.048

Low temperature epoxy bonding for wafer level MEMS packaging

Yong Kook Kim, Eun Kyung Kim, Soo Won Kim, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

Original language	English
Pages (from-to)	323-328
Number of pages	6
Journal	Sensors and Actuators, A: Physical
Volume	143
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2007.10.048
Publication status	Published - 2008 May 16

Keywords

Cu via
Epoxy bonding
Low temperature
Microelectromechanical system (MEMS)
Wafer level packaging

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

Access to Document

10.1016/j.sna.2007.10.048

Fingerprint Dive into the research topics of 'Low temperature epoxy bonding for wafer level MEMS packaging'. Together they form a unique fingerprint.

Cite this

@article{f0c1707c59344be6937a0887ee659778,

title = "Low temperature epoxy bonding for wafer level MEMS packaging",

abstract = "In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.",

keywords = "Cu via, Epoxy bonding, Low temperature, Microelectromechanical system (MEMS), Wafer level packaging",

author = "Kim, {Yong Kook} and Kim, {Eun Kyung} and Kim, {Soo Won} and Ju, {Byeong Kwon}",

year = "2008",

month = may,

day = "16",

doi = "10.1016/j.sna.2007.10.048",

language = "English",

volume = "143",

pages = "323--328",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Low temperature epoxy bonding for wafer level MEMS packaging

AU - Kim, Yong Kook

AU - Kim, Eun Kyung

AU - Kim, Soo Won

AU - Ju, Byeong Kwon

PY - 2008/5/16

Y1 - 2008/5/16

N2 - In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

AB - In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

KW - Cu via

KW - Epoxy bonding

KW - Low temperature

KW - Microelectromechanical system (MEMS)

KW - Wafer level packaging

UR - http://www.scopus.com/inward/record.url?scp=41349086386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41349086386&partnerID=8YFLogxK

U2 - 10.1016/j.sna.2007.10.048

DO - 10.1016/j.sna.2007.10.048

M3 - Article

AN - SCOPUS:41349086386

VL - 143

SP - 323

EP - 328

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 2

ER -

Low temperature epoxy bonding for wafer level MEMS packaging

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this