Low temperature epoxy bonding for wafer level MEMS packaging

Yong Kook Kim, Eun Kyung Kim, Soo-Won Kim, Byeong Kwon Ju

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

Original languageEnglish
Pages (from-to)323-328
Number of pages6
JournalSensors and Actuators, A: Physical
Volume143
Issue number2
DOIs
Publication statusPublished - 2008 May 16

Fingerprint

packaging
microelectromechanical systems
MEMS
Packaging
wafers
Sealing (closing)
Temperature
electroplating
sealing
Electroplating
tensile strength
Copper
Tensile strength
copper
temperature

Keywords

  • Cu via
  • Epoxy bonding
  • Low temperature
  • Microelectromechanical system (MEMS)
  • Wafer level packaging

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

Low temperature epoxy bonding for wafer level MEMS packaging. / Kim, Yong Kook; Kim, Eun Kyung; Kim, Soo-Won; Ju, Byeong Kwon.

In: Sensors and Actuators, A: Physical, Vol. 143, No. 2, 16.05.2008, p. 323-328.

Research output: Contribution to journalArticle

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