Abstract
In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.
| Original language | English |
|---|---|
| Pages (from-to) | 323-328 |
| Number of pages | 6 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 143 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2008 May 16 |
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Keywords
- Cu via
- Epoxy bonding
- Low temperature
- Microelectromechanical system (MEMS)
- Wafer level packaging
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
- Instrumentation
Cite this
Low temperature epoxy bonding for wafer level MEMS packaging. / Kim, Yong Kook; Kim, Eun Kyung; Kim, Soo-Won; Ju, Byeong Kwon.
In: Sensors and Actuators, A: Physical, Vol. 143, No. 2, 16.05.2008, p. 323-328.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low temperature epoxy bonding for wafer level MEMS packaging
AU - Kim, Yong Kook
AU - Kim, Eun Kyung
AU - Kim, Soo-Won
AU - Ju, Byeong Kwon
PY - 2008/5/16
Y1 - 2008/5/16
N2 - In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.
AB - In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.
KW - Cu via
KW - Epoxy bonding
KW - Low temperature
KW - Microelectromechanical system (MEMS)
KW - Wafer level packaging
UR - http://www.scopus.com/inward/record.url?scp=41349086386&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=41349086386&partnerID=8YFLogxK
U2 - 10.1016/j.sna.2007.10.048
DO - 10.1016/j.sna.2007.10.048
M3 - Article
VL - 143
SP - 323
EP - 328
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
IS - 2
ER -