Low temperature epoxy bonding for wafer level MEMS packaging

Yong Kook Kim; Eun Kyung Kim; Soo Won Kim; Byeong Kwon Ju

doi:10.1016/j.sna.2007.10.048

Low temperature epoxy bonding for wafer level MEMS packaging

Yong Kook Kim, Eun Kyung Kim, Soo Won Kim, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

Original language	English
Pages (from-to)	323-328
Number of pages	6
Journal	Sensors and Actuators, A: Physical
Volume	143
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2007.10.048
Publication status	Published - 2008 May 16

Keywords

Cu via
Epoxy bonding
Low temperature
Microelectromechanical system (MEMS)
Wafer level packaging

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2007.10.048

Cite this

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title = "Low temperature epoxy bonding for wafer level MEMS packaging",

abstract = "In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.",

keywords = "Cu via, Epoxy bonding, Low temperature, Microelectromechanical system (MEMS), Wafer level packaging",

author = "Kim, {Yong Kook} and Kim, {Eun Kyung} and Kim, {Soo Won} and Ju, {Byeong Kwon}",

note = "Funding Information: This project is conducted through the Practical Application Project of Advanced Microsystems Packaging Program of Seoul Technopark, funded by the Ministry of Commerce, Industry and Energy. ",

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doi = "10.1016/j.sna.2007.10.048",

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AU - Kim, Yong Kook

AU - Kim, Eun Kyung

AU - Kim, Soo Won

AU - Ju, Byeong Kwon

N1 - Funding Information: This project is conducted through the Practical Application Project of Advanced Microsystems Packaging Program of Seoul Technopark, funded by the Ministry of Commerce, Industry and Energy.

PY - 2008/5/16

Y1 - 2008/5/16

N2 - In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

AB - In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

KW - Cu via

KW - Epoxy bonding

KW - Low temperature

KW - Microelectromechanical system (MEMS)

KW - Wafer level packaging

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JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 2

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Low temperature epoxy bonding for wafer level MEMS packaging

Abstract

Keywords

ASJC Scopus subject areas

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