Abstract
In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.
Original language | English |
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Pages (from-to) | 323-328 |
Number of pages | 6 |
Journal | Sensors and Actuators, A: Physical |
Volume | 143 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2008 May 16 |
Keywords
- Cu via
- Epoxy bonding
- Low temperature
- Microelectromechanical system (MEMS)
- Wafer level packaging
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering