Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain

J. H. Kim, J. W. Kim, J. H. Roh, K. J. Lee, K. M. Do, J. H. Shin, B. M. Moon, S. M. Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of 10 cm 2/Vs and large area uniformity [2, 3].

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Kim, J. H., Kim, J. W., Roh, J. H., Lee, K. J., Do, K. M., Shin, J. H., Moon, B. M., & Koo, S. M. (2011). Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135362] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135362