Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain

J. H. Kim, J. W. Kim, J. H. Roh, K. J. Lee, K. M. Do, J. H. Shin, Byung-Moo Moon, S. M. Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of 10 cm 2/Vs and large area uniformity [2, 3].

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

Fingerprint

Thin film transistors
Amorphous silicon
Flexible displays
Fabrication
Organic light emitting diodes (OLED)
Liquid crystal displays
Transparency
Electric properties
Display devices
Temperature
Processing
Oxide semiconductors

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kim, J. H., Kim, J. W., Roh, J. H., Lee, K. J., Do, K. M., Shin, J. H., ... Koo, S. M. (2011). Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135362] https://doi.org/10.1109/ISDRS.2011.6135362

Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. / Kim, J. H.; Kim, J. W.; Roh, J. H.; Lee, K. J.; Do, K. M.; Shin, J. H.; Moon, Byung-Moo; Koo, S. M.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135362.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, JH, Kim, JW, Roh, JH, Lee, KJ, Do, KM, Shin, JH, Moon, B-M & Koo, SM 2011, Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135362, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 11/12/7. https://doi.org/10.1109/ISDRS.2011.6135362
Kim JH, Kim JW, Roh JH, Lee KJ, Do KM, Shin JH et al. Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135362 https://doi.org/10.1109/ISDRS.2011.6135362
Kim, J. H. ; Kim, J. W. ; Roh, J. H. ; Lee, K. J. ; Do, K. M. ; Shin, J. H. ; Moon, Byung-Moo ; Koo, S. M. / Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011.
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