Low-temperature deposition of high-quality (Ba,Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charge liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280°C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300°C and subsequently annealed at 700°C, were 2.5 × 10-9 A/cm2 at 1.5 V and 305, respectively.
|Number of pages||4|
|Journal||Journal of Materials Research|
|Publication status||Published - 2002 Aug 1|
ASJC Scopus subject areas
- Materials Science(all)