Abstract
Low temperature imprinting on various substrates is essential for applying nanoimprint lithography (NIL) to the patterning process of largearea substrates with low thermal resistance. In addition, the imprinting resist must be distributed uniformly over a large area with near-zero residue imprinting to reduce the level of pattern damage during the residue removal process. In this study, thermal imprinting with a poly(benzyl methacrylate) (PBMA) resist, which can be coated uniformly over a large-area substrate by spin-coating and imprinted at low temperatures, was used to form micro- to nano-sized patterns. The PBMA patterns with a near-zero residual layer could be formed on the substrate using the partial-filling method. Using this imprinting technique, nano-sized PBMA patterns with a minimized residual layer were transferred to a Si wafer and poly(ethylene terephthalate) (PET) film with dimensions 50 × 50mm2. Metal patterns, as small as 70 nm, were fabricated on the substrate using this imprinting and lift-off process.
| Original language | English |
|---|---|
| Pages (from-to) | 0950031-0950034 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 48 |
| Issue number | 9 Part 1 |
| DOIs | |
| Publication status | Published - 2009 Dec 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Low temperature fabrication of residue-free polymer patterns on flexible polymer substrate. / Yang, Ki Yeon; Yoon, Kyung Min; Kim, Jong Woo; Lee, Jong Hwa; Lee, Heon.
In: Japanese Journal of Applied Physics, Vol. 48, No. 9 Part 1, 01.12.2009, p. 0950031-0950034.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low temperature fabrication of residue-free polymer patterns on flexible polymer substrate
AU - Yang, Ki Yeon
AU - Yoon, Kyung Min
AU - Kim, Jong Woo
AU - Lee, Jong Hwa
AU - Lee, Heon
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Low temperature imprinting on various substrates is essential for applying nanoimprint lithography (NIL) to the patterning process of largearea substrates with low thermal resistance. In addition, the imprinting resist must be distributed uniformly over a large area with near-zero residue imprinting to reduce the level of pattern damage during the residue removal process. In this study, thermal imprinting with a poly(benzyl methacrylate) (PBMA) resist, which can be coated uniformly over a large-area substrate by spin-coating and imprinted at low temperatures, was used to form micro- to nano-sized patterns. The PBMA patterns with a near-zero residual layer could be formed on the substrate using the partial-filling method. Using this imprinting technique, nano-sized PBMA patterns with a minimized residual layer were transferred to a Si wafer and poly(ethylene terephthalate) (PET) film with dimensions 50 × 50mm2. Metal patterns, as small as 70 nm, were fabricated on the substrate using this imprinting and lift-off process.
AB - Low temperature imprinting on various substrates is essential for applying nanoimprint lithography (NIL) to the patterning process of largearea substrates with low thermal resistance. In addition, the imprinting resist must be distributed uniformly over a large area with near-zero residue imprinting to reduce the level of pattern damage during the residue removal process. In this study, thermal imprinting with a poly(benzyl methacrylate) (PBMA) resist, which can be coated uniformly over a large-area substrate by spin-coating and imprinted at low temperatures, was used to form micro- to nano-sized patterns. The PBMA patterns with a near-zero residual layer could be formed on the substrate using the partial-filling method. Using this imprinting technique, nano-sized PBMA patterns with a minimized residual layer were transferred to a Si wafer and poly(ethylene terephthalate) (PET) film with dimensions 50 × 50mm2. Metal patterns, as small as 70 nm, were fabricated on the substrate using this imprinting and lift-off process.
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U2 - 10.1143/JJAP.48.095003
DO - 10.1143/JJAP.48.095003
M3 - Article
VL - 48
SP - 950031
EP - 950034
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 Part 1
ER -