Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Ye Zhang, Hongbo Jia, Rongming Wang, Chinping Chen, Xuhui Luo, Dapeng Yu, Cheol Jin Lee

Research output: Contribution to journalArticle

192 Citations (Scopus)

Abstract

High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

Original languageEnglish
Pages (from-to)4631-4633
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number22
DOIs
Publication statusPublished - 2003 Dec 1
Externally publishedYes

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nanowires
Raman spectra
scattering
micrometers
vapor deposition
wafers
scanning electron microscopy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate. / Zhang, Ye; Jia, Hongbo; Wang, Rongming; Chen, Chinping; Luo, Xuhui; Yu, Dapeng; Lee, Cheol Jin.

In: Applied Physics Letters, Vol. 83, No. 22, 01.12.2003, p. 4631-4633.

Research output: Contribution to journalArticle

Zhang, Ye ; Jia, Hongbo ; Wang, Rongming ; Chen, Chinping ; Luo, Xuhui ; Yu, Dapeng ; Lee, Cheol Jin. / Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate. In: Applied Physics Letters. 2003 ; Vol. 83, No. 22. pp. 4631-4633.
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