Abstract
High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.
| Original language | English |
|---|---|
| Pages (from-to) | 4631-4633 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2003 Dec 1 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Zhang, Y., Jia, H., Wang, R., Chen, C., Luo, X., Yu, D., & Lee, C. (2003). Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate. Applied Physics Letters, 83(22), 4631-4633. https://doi.org/10.1063/1.1630849