Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Ye Zhang, Hongbo Jia, Rongming Wang, Chinping Chen, Xuhui Luo, Dapeng Yu, Cheol Jin Lee

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High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

Original languageEnglish
Pages (from-to)4631-4633
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2003 Dec 1
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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