Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Ye Zhang; Hongbo Jia; Rongming Wang; Chinping Chen; Xuhui Luo; Dapeng Yu; Cheoljin Lee

doi:10.1063/1.1630849

Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Ye Zhang, Hongbo Jia, Rongming Wang, Chinping Chen, Xuhui Luo, Dapeng Yu, Cheoljin Lee

Research output: Contribution to journal › Article › peer-review

198 Citations (Scopus)

Abstract

High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

Original language	English
Pages (from-to)	4631-4633
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1630849
Publication status	Published - 2003 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Jia, Hongbo

AU - Wang, Rongming

AU - Chen, Chinping

AU - Luo, Xuhui

AU - Yu, Dapeng

AU - Lee, Cheoljin

PY - 2003/12/1

Y1 - 2003/12/1

N2 - High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

AB - High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

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Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Abstract

ASJC Scopus subject areas

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