Abstract
High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.
Original language | English |
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Pages (from-to) | 4631-4633 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2003 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)