Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Ye Zhang; Hongbo Jia; Rongming Wang; Chinping Chen; Xuhui Luo; Dapeng Yu; Cheol Jin Lee

doi:10.1063/1.1630849

Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

Ye Zhang, Hongbo Jia, Rongming Wang, Chinping Chen, Xuhui Luo, Dapeng Yu, Cheol Jin Lee

Research output: Contribution to journal › Article

195 Citations (Scopus)

Abstract

High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

Original language	English
Pages (from-to)	4631-4633
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1630849
Publication status	Published - 2003 Dec 1
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Zhang, Y., Jia, H., Wang, R., Chen, C., Luo, X., Yu, D., & Lee, C. J. (2003). Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate. Applied Physics Letters, 83(22), 4631-4633. https://doi.org/10.1063/1.1630849

@article{1f5e6c5a25d04821b9117f7f7c9f22a4,

title = "Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate",

abstract = "High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.",

author = "Ye Zhang and Hongbo Jia and Rongming Wang and Chinping Chen and Xuhui Luo and Dapeng Yu and Lee, {Cheol Jin}",

year = "2003",

month = dec

day = "1",

doi = "10.1063/1.1630849",

language = "English",

volume = "83",

pages = "4631--4633",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Low-temperature growth and Raman scattering study of vertically aligned ZnO nanowires on Si substrate

AU - Zhang, Ye

AU - Jia, Hongbo

AU - Wang, Rongming

AU - Chen, Chinping

AU - Luo, Xuhui

AU - Yu, Dapeng

AU - Lee, Cheol Jin

PY - 2003/12/1

Y1 - 2003/12/1

N2 - High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

AB - High-density, vertically oriented ZnONW arrays were fabricated on the Si wafers via a physical vapor deposition method at low growth temperature. SEM observations, XRD, and PL spectra demonstrate that the ZnONW array possess a good crystalline character. The nanowires have diameters of 70 to 100 nm and lengths of several micrometers. All of the evidence confirm that the ZnONWs are well aligned and c-axis oriented.

UR - http://www.scopus.com/inward/record.url?scp=0348107238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348107238&partnerID=8YFLogxK

U2 - 10.1063/1.1630849

DO - 10.1063/1.1630849

M3 - Article

AN - SCOPUS:0348107238

VL - 83

SP - 4631

EP - 4633

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -

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10.1063/1.1630849