Abstract
GaN films were deposited on sapphire(0001) and Si(100) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully growth on α-Al2O3 substrates even at relatively low temperatures (<800°C). Sapphire substrate RMS roughness was 5.01 and 4.93 angstrom before and after the exposure to DBD N-source, respectively. This shows negligible irradiation damage of accelerated N2 + ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 478-486 |
| Number of pages | 9 |
| Journal | Journal of Crystal Growth |
| Volume | 210 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2000 Mar 1 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge. / Kim, Joosung; Byun, Dong Jin; Kim, Jin Sang; Kum, Dong Wha.
In: Journal of Crystal Growth, Vol. 210, No. 4, 01.03.2000, p. 478-486.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge
AU - Kim, Joosung
AU - Byun, Dong Jin
AU - Kim, Jin Sang
AU - Kum, Dong Wha
PY - 2000/3/1
Y1 - 2000/3/1
N2 - GaN films were deposited on sapphire(0001) and Si(100) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully growth on α-Al2O3 substrates even at relatively low temperatures (<800°C). Sapphire substrate RMS roughness was 5.01 and 4.93 angstrom before and after the exposure to DBD N-source, respectively. This shows negligible irradiation damage of accelerated N2 + ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.
AB - GaN films were deposited on sapphire(0001) and Si(100) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully growth on α-Al2O3 substrates even at relatively low temperatures (<800°C). Sapphire substrate RMS roughness was 5.01 and 4.93 angstrom before and after the exposure to DBD N-source, respectively. This shows negligible irradiation damage of accelerated N2 + ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.
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U2 - 10.1016/S0022-0248(99)00759-9
DO - 10.1016/S0022-0248(99)00759-9
M3 - Article
AN - SCOPUS:0033876790
VL - 210
SP - 478
EP - 486
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -