Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge

Joosung Kim, Dong Jin Byun, Jin Sang Kim, Dong Wha Kum

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

GaN films were deposited on sapphire(0001) and Si(100) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully growth on α-Al2O3 substrates even at relatively low temperatures (<800°C). Sapphire substrate RMS roughness was 5.01 and 4.93 angstrom before and after the exposure to DBD N-source, respectively. This shows negligible irradiation damage of accelerated N2 + ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.

Original languageEnglish
Pages (from-to)478-486
Number of pages9
JournalJournal of Crystal Growth
Volume210
Issue number4
DOIs
Publication statusPublished - 2000 Mar 1

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Growth temperature
Nitrogen
nitrogen
Substrates
Aluminum Oxide
Sapphire
Luminescence
sapphire
luminescence
Metallorganic chemical vapor deposition
wurtzite
metalorganic chemical vapor deposition
roughness
Surface roughness
Irradiation
Impurities
Ions
Oxygen
damage
impurities

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge. / Kim, Joosung; Byun, Dong Jin; Kim, Jin Sang; Kum, Dong Wha.

In: Journal of Crystal Growth, Vol. 210, No. 4, 01.03.2000, p. 478-486.

Research output: Contribution to journalArticle

Kim, Joosung ; Byun, Dong Jin ; Kim, Jin Sang ; Kum, Dong Wha. / Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge. In: Journal of Crystal Growth. 2000 ; Vol. 210, No. 4. pp. 478-486.
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