TY - JOUR
T1 - Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge
AU - Kim, Joosung
AU - Byun, Dongjin
AU - Kim, Jin Sang
AU - Kum, Dong Wha
N1 - Funding Information:
This work was supported by The Korea Science and Engineering Foundation (Grant No. 98-0300-08-01-03) and KIST-2000 Research Program (Grant No. 2V00253).
PY - 2000/3
Y1 - 2000/3
N2 - GaN films were deposited on sapphire(0001) and Si(100) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully growth on α-Al2O3 substrates even at relatively low temperatures (<800°C). Sapphire substrate RMS roughness was 5.01 and 4.93 angstrom before and after the exposure to DBD N-source, respectively. This shows negligible irradiation damage of accelerated N2+ ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.
AB - GaN films were deposited on sapphire(0001) and Si(100) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully growth on α-Al2O3 substrates even at relatively low temperatures (<800°C). Sapphire substrate RMS roughness was 5.01 and 4.93 angstrom before and after the exposure to DBD N-source, respectively. This shows negligible irradiation damage of accelerated N2+ ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.
UR - http://www.scopus.com/inward/record.url?scp=0033876790&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(99)00759-9
DO - 10.1016/S0022-0248(99)00759-9
M3 - Article
AN - SCOPUS:0033876790
VL - 210
SP - 478
EP - 486
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -