Low-temperature growth of highly crystalline (Ba, Sr)TiO3 films by CLCB method

Hochul Rang; Sungho Park; Kyekyoon Kim; Man Y. Sung; Hyungsoo Choi

doi:10.1149/1.1809551

Low-temperature growth of highly crystalline (Ba, Sr)TiO₃ films by CLCB method

Hochul Rang, Sungho Park, Kyekyoon Kim, Man Y. Sung, Hyungsoo Choi

* Honorary professors

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

High-quality barium strontium titanate (BST) thin films were fabricated using charged liquid cluster beam (CLCB) method. The X-ray diffraction patterns of the as-deposited BST films indicated that the perovskite phase appeared at 450°C without any intermediate phase and high film crystallinity was achieved at 500°C. The Ba:Sr:Ti ratio in the precursor solution was transferred to the deposited film without any loss. The crystallinity, dielectric constant, dissipation factor, and leakage current density were measured and compared for the as-deposited films prepared at 500°C and the films deposited at 400°C and postannealed at 700°C.

Original language	English
Article number	4
Pages (from-to)	F77-F80
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	12
DOIs	https://doi.org/10.1149/1.1809551
Publication status	Published - 2004

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "High-quality barium strontium titanate (BST) thin films were fabricated using charged liquid cluster beam (CLCB) method. The X-ray diffraction patterns of the as-deposited BST films indicated that the perovskite phase appeared at 450°C without any intermediate phase and high film crystallinity was achieved at 500°C. The Ba:Sr:Ti ratio in the precursor solution was transferred to the deposited film without any loss. The crystallinity, dielectric constant, dissipation factor, and leakage current density were measured and compared for the as-deposited films prepared at 500°C and the films deposited at 400°C and postannealed at 700°C.",

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T1 - Low-temperature growth of highly crystalline (Ba, Sr)TiO3 films by CLCB method

AU - Rang, Hochul

AU - Park, Sungho

AU - Kim, Kyekyoon

AU - Sung, Man Y.

AU - Choi, Hyungsoo

PY - 2004

Y1 - 2004

N2 - High-quality barium strontium titanate (BST) thin films were fabricated using charged liquid cluster beam (CLCB) method. The X-ray diffraction patterns of the as-deposited BST films indicated that the perovskite phase appeared at 450°C without any intermediate phase and high film crystallinity was achieved at 500°C. The Ba:Sr:Ti ratio in the precursor solution was transferred to the deposited film without any loss. The crystallinity, dielectric constant, dissipation factor, and leakage current density were measured and compared for the as-deposited films prepared at 500°C and the films deposited at 400°C and postannealed at 700°C.

AB - High-quality barium strontium titanate (BST) thin films were fabricated using charged liquid cluster beam (CLCB) method. The X-ray diffraction patterns of the as-deposited BST films indicated that the perovskite phase appeared at 450°C without any intermediate phase and high film crystallinity was achieved at 500°C. The Ba:Sr:Ti ratio in the precursor solution was transferred to the deposited film without any loss. The crystallinity, dielectric constant, dissipation factor, and leakage current density were measured and compared for the as-deposited films prepared at 500°C and the films deposited at 400°C and postannealed at 700°C.

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Low-temperature growth of highly crystalline (Ba, Sr)TiO₃ films by CLCB method

Abstract

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