Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Hyun-Yong Yu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

Original languageEnglish
Article number8490847
Pages (from-to)1828-1831
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number12
DOIs
Publication statusPublished - 2018 Dec 1

Keywords

  • CMOS technology
  • hybrid dopant activation technique
  • low-temperature doping method
  • pulsed green laser
  • SiGe source/drain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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