@article{4c8e2e670cfe487bbb04dd7b5b29b7ae,
title = "Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain",
abstract = "We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.",
keywords = "CMOS technology, SiGe source/drain, hybrid dopant activation technique, low-temperature doping method, pulsed green laser",
author = "Kim, {Seung Geun} and Kim, {Gwang Sik} and Kim, {Seung Hwan} and Yu, {Hyun Yong}",
note = "Funding Information: Manuscript received September 10, 2018; revised October 3, 2018; accepted October 10, 2018. Date of publication October 12, 2018; date of current version November 26, 2018. This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant 2017R1A2B4006460, in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grant 2016M3A7B4910426, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea Funded by the Ministry of Science, ICT and Future Planning under Grant 2015M3A7B7045490. The review of this letter was arranged by Editor B. S. Doyle. (Corresponding author: Hyun-Yong Yu.) S.-G. Kim is with the Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: {\textcopyright} 2018 IEEE.",
year = "2018",
month = dec,
doi = "10.1109/LED.2018.2875751",
language = "English",
volume = "39",
pages = "1828--1831",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}