Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Seung Geun Kim; Gwang Sik Kim; Seung Hwan Kim; Hyun-Yong Yu

doi:10.1109/LED.2018.2875751

Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Hyun-Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 10²⁰ cm^-3 and 9.27 × 10²⁰ cm^-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

Original language	English
Article number	8490847
Pages (from-to)	1828-1831
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	12
DOIs	https://doi.org/10.1109/LED.2018.2875751
Publication status	Published - 2018 Dec 1

Keywords

CMOS technology
hybrid dopant activation technique
low-temperature doping method
pulsed green laser
SiGe source/drain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain",

abstract = "We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.",

keywords = "CMOS technology, hybrid dopant activation technique, low-temperature doping method, pulsed green laser, SiGe source/drain",

author = "Kim, {Seung Geun} and Kim, {Gwang Sik} and Kim, {Seung Hwan} and Hyun-Yong Yu",

year = "2018",

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doi = "10.1109/LED.2018.2875751",

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AU - Kim, Seung Geun

AU - Kim, Gwang Sik

AU - Kim, Seung Hwan

AU - Yu, Hyun-Yong

PY - 2018/12/1

Y1 - 2018/12/1

N2 - We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

AB - We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (≤500 °C) using rapid thermal annealing and pulsed green laser post-annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrations of 1.82 × 1020 cm-3 and 9.27 × 1020 cm-3, respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.

KW - CMOS technology

KW - hybrid dopant activation technique

KW - low-temperature doping method

KW - pulsed green laser

KW - SiGe source/drain

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Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain

Abstract

Keywords

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