Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

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Abstract

The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (LM = 30 nm) and a long channel (LM = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (gm) behavior and compared to conventional inversion-mode nanowire transistors.

Original languageEnglish
Article number263505
JournalApplied Physics Letters
Volume105
Issue number26
DOIs
Publication statusPublished - 2014 Dec 29

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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