Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (LM = 30 nm) and a long channel (LM = 10 μm), were investigated through an in-depth study of the temperature dependence of transconductance (gm) behavior and compared to conventional inversion-mode nanowire transistors.

Original languageEnglish
Article number263505
JournalApplied Physics Letters
Volume105
Issue number26
DOIs
Publication statusPublished - 2014 Dec 29

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surface roughness
nanowires
transistors
transconductance
scattering
inversions
temperature dependence
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low-temperature operation of junctionless nanowire transistors : Less surface roughness scattering effects and dominant scattering mechanisms. / Jeon, Dae Young; Park, So Jeong; Mouis, Mireille; Barraud, Sylvain; Kim, Gyu-Tae; Ghibaudo, Gérard.

In: Applied Physics Letters, Vol. 105, No. 26, 263505, 29.12.2014.

Research output: Contribution to journalArticle

Jeon, Dae Young ; Park, So Jeong ; Mouis, Mireille ; Barraud, Sylvain ; Kim, Gyu-Tae ; Ghibaudo, Gérard. / Low-temperature operation of junctionless nanowire transistors : Less surface roughness scattering effects and dominant scattering mechanisms. In: Applied Physics Letters. 2014 ; Vol. 105, No. 26.
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