Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

Eung Kil Kang; Hyuk Kyoo Jang; Sung Kyun Lee; Eung Ryul Park; Cheol Eui Lee; Kyung Min Kim; Seung Jeong Noh; Seung Jin Yeom

doi:10.1016/S1567-1739(02)00150-5

Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

Eung Kil Kang, Hyuk Kyoo Jang, Sung Kyun Lee, Eung Ryul Park, Cheol Eui Lee, Kyung Min Kim, Seung Jeong Noh, Seung Jin Yeom

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ferroelectric thin films of sol-gel-derived Pb(Zr_x, Ti_1-x)O₃ (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.

Original language	English
Pages (from-to)	407-409
Number of pages	3
Journal	Current Applied Physics
Volume	2
Issue number	5
DOIs	https://doi.org/10.1016/S1567-1739(02)00150-5
Publication status	Published - 2002 Oct

Keywords

Low-temperature processing
Oxygen-plasma treatment
PZT
Thin films

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/S1567-1739(02)00150-5

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@article{53aee673782c44a2b13c42465db50751,

title = "Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment",

abstract = "Ferroelectric thin films of sol-gel-derived Pb(Zrx, Ti1-x)O3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.",

keywords = "Low-temperature processing, Oxygen-plasma treatment, PZT, Thin films",

author = "Kang, {Eung Kil} and Jang, {Hyuk Kyoo} and Lee, {Sung Kyun} and Park, {Eung Ryul} and Lee, {Cheol Eui} and Kim, {Kyung Min} and Noh, {Seung Jeong} and Yeom, {Seung Jin}",

note = "Funding Information: This work was supported by the Korea Ministry of Science and Technology (National Research Laboratory) and the Korea Research Foundation. A grant from Hynix Semiconductor and measurements at the Korea Basic Science Institute (KBSI)-Seoul Branch are acknowledged.",

year = "2002",

month = oct,

doi = "10.1016/S1567-1739(02)00150-5",

language = "English",

volume = "2",

pages = "407--409",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

AU - Kang, Eung Kil

AU - Jang, Hyuk Kyoo

AU - Lee, Sung Kyun

AU - Park, Eung Ryul

AU - Lee, Cheol Eui

AU - Kim, Kyung Min

AU - Noh, Seung Jeong

AU - Yeom, Seung Jin

N1 - Funding Information: This work was supported by the Korea Ministry of Science and Technology (National Research Laboratory) and the Korea Research Foundation. A grant from Hynix Semiconductor and measurements at the Korea Basic Science Institute (KBSI)-Seoul Branch are acknowledged.

PY - 2002/10

Y1 - 2002/10

N2 - Ferroelectric thin films of sol-gel-derived Pb(Zrx, Ti1-x)O3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.

AB - Ferroelectric thin films of sol-gel-derived Pb(Zrx, Ti1-x)O3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.

KW - Low-temperature processing

KW - Oxygen-plasma treatment

KW - PZT

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0036802006&partnerID=8YFLogxK

U2 - 10.1016/S1567-1739(02)00150-5

DO - 10.1016/S1567-1739(02)00150-5

M3 - Article

AN - SCOPUS:0036802006

SN - 1567-1739

VL - 2

SP - 407

EP - 409

JO - Current Applied Physics

JF - Current Applied Physics

IS - 5

ER -

Low-temperature processing of sol-gel-derived lead-zirconate-titanate thin films by oxygen-plasma treatment

Abstract

Keywords

ASJC Scopus subject areas

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