Low-temperature silicon wafer-scale thermocompression bonding using electroplated gold layers in hermetic packaging

Gil Soo Park; Yong Kook Kim; Kyeong Kap Paek; Jin Sang Kim; Jong Heun Lee; Byeong Kwon Ju

doi:10.1149/1.2077077

Low-temperature silicon wafer-scale thermocompression bonding using electroplated gold layers in hermetic packaging

Gil Soo Park, Yong Kook Kim, Kyeong Kap Paek, Jin Sang Kim, Jong Heun Lee, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We describe a low-temperature wafer-scale thermocompression bonding using electroplated gold layers. Silicon wafers were completely bonded at 320°C at a pressure of 2.5 MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. Helium leak rate was measured for application of thermocompression bonding to hermetic packaging and was 2.74 ± 0.61 × 10^-11 Pa m³/s. Therefore, Au thermo-compression bonding can be applied to high quality hermetic wafer level packaging of radio-frequency microelectromechanical system devices.

Original language	English
Pages (from-to)	G330-G332
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1149/1.2077077
Publication status	Published - 2005

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "We describe a low-temperature wafer-scale thermocompression bonding using electroplated gold layers. Silicon wafers were completely bonded at 320°C at a pressure of 2.5 MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. Helium leak rate was measured for application of thermocompression bonding to hermetic packaging and was 2.74 ± 0.61 × 10-11 Pa m3/s. Therefore, Au thermo-compression bonding can be applied to high quality hermetic wafer level packaging of radio-frequency microelectromechanical system devices.",

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AU - Park, Gil Soo

AU - Kim, Yong Kook

AU - Paek, Kyeong Kap

AU - Kim, Jin Sang

AU - Lee, Jong Heun

AU - Ju, Byeong Kwon

PY - 2005

Y1 - 2005

N2 - We describe a low-temperature wafer-scale thermocompression bonding using electroplated gold layers. Silicon wafers were completely bonded at 320°C at a pressure of 2.5 MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. Helium leak rate was measured for application of thermocompression bonding to hermetic packaging and was 2.74 ± 0.61 × 10-11 Pa m3/s. Therefore, Au thermo-compression bonding can be applied to high quality hermetic wafer level packaging of radio-frequency microelectromechanical system devices.

AB - We describe a low-temperature wafer-scale thermocompression bonding using electroplated gold layers. Silicon wafers were completely bonded at 320°C at a pressure of 2.5 MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. Helium leak rate was measured for application of thermocompression bonding to hermetic packaging and was 2.74 ± 0.61 × 10-11 Pa m3/s. Therefore, Au thermo-compression bonding can be applied to high quality hermetic wafer level packaging of radio-frequency microelectromechanical system devices.

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Low-temperature silicon wafer-scale thermocompression bonding using electroplated gold layers in hermetic packaging

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