Abstract
The low sintering temperature and the good dielectric properties such as high dielectric constant (ε r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba3Ti5Nb 6O28 ceramics were investigated as a function of B 2O3-CuO content. The pure Ba3Ti 5Nb6O28 system showed a high sintering temperature (1250°C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε r of 37, TCF of -12 ppm/°C. The addition of B2O3-CuO was revealed to lower the sintering temperature of Ba3Ti5Nb6O28, 900°C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε r of 40, TCF of 9 ppm/°C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.
| Original language | English |
|---|---|
| Pages (from-to) | 439-443 |
| Number of pages | 5 |
| Journal | Journal of Electroceramics |
| Volume | 17 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Externally published | Yes |
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Keywords
- BaTiNbO
- Dielectric properties
- Low temperature sintering
- XPS
ASJC Scopus subject areas
- Ceramics and Composites
Cite this
Low temperature sintering and microwave dielectric properties of Ba 3Ti5Nb6O28 with B2O 3 and CuO additions. / Kim, Jeong Ryeol; Kim, Dong-Wan; Yoon, Sung Hun; Hong, Kug Sun.
In: Journal of Electroceramics, Vol. 17, No. 2-4, 01.12.2006, p. 439-443.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low temperature sintering and microwave dielectric properties of Ba 3Ti5Nb6O28 with B2O 3 and CuO additions
AU - Kim, Jeong Ryeol
AU - Kim, Dong-Wan
AU - Yoon, Sung Hun
AU - Hong, Kug Sun
PY - 2006/12/1
Y1 - 2006/12/1
N2 - The low sintering temperature and the good dielectric properties such as high dielectric constant (ε r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba3Ti5Nb 6O28 ceramics were investigated as a function of B 2O3-CuO content. The pure Ba3Ti 5Nb6O28 system showed a high sintering temperature (1250°C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε r of 37, TCF of -12 ppm/°C. The addition of B2O3-CuO was revealed to lower the sintering temperature of Ba3Ti5Nb6O28, 900°C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε r of 40, TCF of 9 ppm/°C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.
AB - The low sintering temperature and the good dielectric properties such as high dielectric constant (ε r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba3Ti5Nb 6O28 ceramics were investigated as a function of B 2O3-CuO content. The pure Ba3Ti 5Nb6O28 system showed a high sintering temperature (1250°C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε r of 37, TCF of -12 ppm/°C. The addition of B2O3-CuO was revealed to lower the sintering temperature of Ba3Ti5Nb6O28, 900°C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε r of 40, TCF of 9 ppm/°C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.
KW - BaTiNbO
KW - Dielectric properties
KW - Low temperature sintering
KW - XPS
UR - http://www.scopus.com/inward/record.url?scp=33847229882&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847229882&partnerID=8YFLogxK
U2 - 10.1007/s10832-006-0453-5
DO - 10.1007/s10832-006-0453-5
M3 - Article
AN - SCOPUS:33847229882
VL - 17
SP - 439
EP - 443
JO - Journal of Electroceramics
JF - Journal of Electroceramics
SN - 1385-3449
IS - 2-4
ER -