Low temperature sintering and microwave dielectric properties of Ba 3Ti5Nb6O28 with B2O 3 and CuO additions

Jeong Ryeol Kim, Dong-Wan Kim, Sung Hun Yoon, Kug Sun Hong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The low sintering temperature and the good dielectric properties such as high dielectric constant (ε r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba3Ti5Nb 6O28 ceramics were investigated as a function of B 2O3-CuO content. The pure Ba3Ti 5Nb6O28 system showed a high sintering temperature (1250°C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε r of 37, TCF of -12 ppm/°C. The addition of B2O3-CuO was revealed to lower the sintering temperature of Ba3Ti5Nb6O28, 900°C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε r of 40, TCF of 9 ppm/°C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.

Original languageEnglish
Pages (from-to)439-443
Number of pages5
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes

Fingerprint

Dielectric properties
dielectric properties
sintering
Sintering
Microwaves
microwaves
resonant frequencies
Q factors
Natural frequencies
Temperature
temperature
coefficients
ceramics
wireless communication
Oxygen vacancies
X ray powder diffraction
x rays
chips
photoelectron spectroscopy
permittivity

Keywords

  • BaTiNbO
  • Dielectric properties
  • Low temperature sintering
  • XPS

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Low temperature sintering and microwave dielectric properties of Ba 3Ti5Nb6O28 with B2O 3 and CuO additions. / Kim, Jeong Ryeol; Kim, Dong-Wan; Yoon, Sung Hun; Hong, Kug Sun.

In: Journal of Electroceramics, Vol. 17, No. 2-4, 01.12.2006, p. 439-443.

Research output: Contribution to journalArticle

@article{98dcf206d0e846eeb1e34df0fdd14586,
title = "Low temperature sintering and microwave dielectric properties of Ba 3Ti5Nb6O28 with B2O 3 and CuO additions",
abstract = "The low sintering temperature and the good dielectric properties such as high dielectric constant (ε r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba3Ti5Nb 6O28 ceramics were investigated as a function of B 2O3-CuO content. The pure Ba3Ti 5Nb6O28 system showed a high sintering temperature (1250°C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε r of 37, TCF of -12 ppm/°C. The addition of B2O3-CuO was revealed to lower the sintering temperature of Ba3Ti5Nb6O28, 900°C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε r of 40, TCF of 9 ppm/°C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.",
keywords = "BaTiNbO, Dielectric properties, Low temperature sintering, XPS",
author = "Kim, {Jeong Ryeol} and Dong-Wan Kim and Yoon, {Sung Hun} and Hong, {Kug Sun}",
year = "2006",
month = "12",
day = "1",
doi = "10.1007/s10832-006-0453-5",
language = "English",
volume = "17",
pages = "439--443",
journal = "Journal of Electroceramics",
issn = "1385-3449",
publisher = "Springer Netherlands",
number = "2-4",

}

TY - JOUR

T1 - Low temperature sintering and microwave dielectric properties of Ba 3Ti5Nb6O28 with B2O 3 and CuO additions

AU - Kim, Jeong Ryeol

AU - Kim, Dong-Wan

AU - Yoon, Sung Hun

AU - Hong, Kug Sun

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The low sintering temperature and the good dielectric properties such as high dielectric constant (ε r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba3Ti5Nb 6O28 ceramics were investigated as a function of B 2O3-CuO content. The pure Ba3Ti 5Nb6O28 system showed a high sintering temperature (1250°C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε r of 37, TCF of -12 ppm/°C. The addition of B2O3-CuO was revealed to lower the sintering temperature of Ba3Ti5Nb6O28, 900°C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε r of 40, TCF of 9 ppm/°C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.

AB - The low sintering temperature and the good dielectric properties such as high dielectric constant (ε r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba3Ti5Nb 6O28 ceramics were investigated as a function of B 2O3-CuO content. The pure Ba3Ti 5Nb6O28 system showed a high sintering temperature (1250°C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε r of 37, TCF of -12 ppm/°C. The addition of B2O3-CuO was revealed to lower the sintering temperature of Ba3Ti5Nb6O28, 900°C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε r of 40, TCF of 9 ppm/°C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.

KW - BaTiNbO

KW - Dielectric properties

KW - Low temperature sintering

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=33847229882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847229882&partnerID=8YFLogxK

U2 - 10.1007/s10832-006-0453-5

DO - 10.1007/s10832-006-0453-5

M3 - Article

VL - 17

SP - 439

EP - 443

JO - Journal of Electroceramics

JF - Journal of Electroceramics

SN - 1385-3449

IS - 2-4

ER -