Low-temperature sintering of temperature-stable LaNbO4 microwave dielectric ceramics

Hang Won Lee; Jeong Hyun Park; Sahn Nahm; Dong Wan Kim; Jae Gwan Park

doi:10.1016/j.materresbull.2009.09.008

Low-temperature sintering of temperature-stable LaNbO₄ microwave dielectric ceramics

Hang Won Lee, Jeong Hyun Park, Sahn Nahm, Dong Wan Kim, Jae Gwan Park

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

We demonstrate the correlation between sintering behavior and microstructural observations in low-temperature sintered, LaNbO₄ microwave ceramics. Small CuO additions to LaNbO₄ significantly lowered the sintering temperature from 1250 to 950 °C. To elucidate the sintering mechanism, the internal microstructure of the sample manipulated by a focused ion beam (FIB) was investigated using transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). LaNbO₄ with 3 wt% CuO sintered at 950 °C for 2 h possessed the following excellent microwave dielectric properties: a quality factor (Qxf) of 49,000 GHz, relative dielectric constant (ε_r) of 19.5, and temperature coefficient of resonant frequency (τ_f) of 1 ppm/°C. The ferroelastic phase transformation was also investigated using in situ X-ray diffraction (XRD) to explain the variation of τ_f in low-temperature sintered LaNbO₄ as a function of CuO content.

Original language	English
Pages (from-to)	21-24
Number of pages	4
Journal	Materials Research Bulletin
Volume	45
Issue number	1
DOIs	https://doi.org/10.1016/j.materresbull.2009.09.008
Publication status	Published - 2010 Jan
Externally published	Yes

Keywords

A. Ceramics
A. Oxides
C. Electron microscopy
D. Dielectric properties
D. Microstructure

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low-temperature sintering of temperature-stable LaNbO4 microwave dielectric ceramics",

abstract = "We demonstrate the correlation between sintering behavior and microstructural observations in low-temperature sintered, LaNbO4 microwave ceramics. Small CuO additions to LaNbO4 significantly lowered the sintering temperature from 1250 to 950 °C. To elucidate the sintering mechanism, the internal microstructure of the sample manipulated by a focused ion beam (FIB) was investigated using transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). LaNbO4 with 3 wt% CuO sintered at 950 °C for 2 h possessed the following excellent microwave dielectric properties: a quality factor (Qxf) of 49,000 GHz, relative dielectric constant (εr) of 19.5, and temperature coefficient of resonant frequency (τf) of 1 ppm/°C. The ferroelastic phase transformation was also investigated using in situ X-ray diffraction (XRD) to explain the variation of τf in low-temperature sintered LaNbO4 as a function of CuO content.",

keywords = "A. Ceramics, A. Oxides, C. Electron microscopy, D. Dielectric properties, D. Microstructure",

author = "Lee, {Hang Won} and Park, {Jeong Hyun} and Sahn Nahm and Kim, {Dong Wan} and Park, {Jae Gwan}",

note = "Funding Information: This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy (MKE), Republic of Korea. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2010",

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doi = "10.1016/j.materresbull.2009.09.008",

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AU - Lee, Hang Won

AU - Park, Jeong Hyun

AU - Nahm, Sahn

AU - Kim, Dong Wan

AU - Park, Jae Gwan

N1 - Funding Information: This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy (MKE), Republic of Korea. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2010/1

Y1 - 2010/1

N2 - We demonstrate the correlation between sintering behavior and microstructural observations in low-temperature sintered, LaNbO4 microwave ceramics. Small CuO additions to LaNbO4 significantly lowered the sintering temperature from 1250 to 950 °C. To elucidate the sintering mechanism, the internal microstructure of the sample manipulated by a focused ion beam (FIB) was investigated using transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). LaNbO4 with 3 wt% CuO sintered at 950 °C for 2 h possessed the following excellent microwave dielectric properties: a quality factor (Qxf) of 49,000 GHz, relative dielectric constant (εr) of 19.5, and temperature coefficient of resonant frequency (τf) of 1 ppm/°C. The ferroelastic phase transformation was also investigated using in situ X-ray diffraction (XRD) to explain the variation of τf in low-temperature sintered LaNbO4 as a function of CuO content.

AB - We demonstrate the correlation between sintering behavior and microstructural observations in low-temperature sintered, LaNbO4 microwave ceramics. Small CuO additions to LaNbO4 significantly lowered the sintering temperature from 1250 to 950 °C. To elucidate the sintering mechanism, the internal microstructure of the sample manipulated by a focused ion beam (FIB) was investigated using transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). LaNbO4 with 3 wt% CuO sintered at 950 °C for 2 h possessed the following excellent microwave dielectric properties: a quality factor (Qxf) of 49,000 GHz, relative dielectric constant (εr) of 19.5, and temperature coefficient of resonant frequency (τf) of 1 ppm/°C. The ferroelastic phase transformation was also investigated using in situ X-ray diffraction (XRD) to explain the variation of τf in low-temperature sintered LaNbO4 as a function of CuO content.

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