Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

G. Yang, A. E. Bolotnikov, Y. Cui, G. S. Camarda, A. Hossain, K. H. Kim, R. Gul, R. B. James

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Abstract

We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.

Original languageEnglish
Article number261901
JournalApplied Physics Letters
Volume98
Issue number26
DOIs
Publication statusPublished - 2011 Jun 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Yang, G., Bolotnikov, A. E., Cui, Y., Camarda, G. S., Hossain, A., Kim, K. H., Gul, R., & James, R. B. (2011). Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals. Applied Physics Letters, 98(26), [261901]. https://doi.org/10.1063/1.3603930