Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

G. Yang; A. E. Bolotnikov; Y. Cui; G. S. Camarda; A. Hossain; K. H. Kim; R. Gul; R. B. James

doi:10.1063/1.3603930

Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

G. Yang, A. E. Bolotnikov, Y. Cui, G. S. Camarda, A. Hossain, K. H. Kim, R. Gul, R. B. James

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.

Original language	English
Article number	261901
Journal	Applied Physics Letters
Volume	98
Issue number	26
DOIs	https://doi.org/10.1063/1.3603930
Publication status	Published - 2011 Jun 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3603930

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title = "Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals",

abstract = "We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.",

author = "G. Yang and Bolotnikov, {A. E.} and Y. Cui and Camarda, {G. S.} and A. Hossain and Kim, {K. H.} and R. Gul and James, {R. B.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy.",

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doi = "10.1063/1.3603930",

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T1 - Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

AU - Yang, G.

AU - Bolotnikov, A. E.

AU - Cui, Y.

AU - Camarda, G. S.

AU - Hossain, A.

AU - Kim, K. H.

AU - Gul, R.

AU - James, R. B.

N1 - Funding Information: This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy.

PY - 2011/6/27

Y1 - 2011/6/27

N2 - We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.

AB - We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.

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DO - 10.1063/1.3603930

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

Abstract

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