Low-temperature wafer-scale synthesis of two-dimensional SnS2

Jung Joon Pyeon, In Hwan Baek, Weon Cheol Lim, Keun Hwa Chae, Seong Ho Han, Ga Yeon Lee, Seung Hyub Baek, Jin Sang Kim, Ji Won Choi, Taek Mo Chung, Jeong Hwan Han, Chong-Yun Kang, Seong Keun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.e., the low-temperature synthesis of wafer-scale, continuous, and orientation-controlled 2D metal dichalcogenides, still remains a significant challenge. Here, we report the low-temperature (≤350 °C) synthesis of uniform and continuous n-type SnS2 thin films via the combination of atomic layer deposition (ALD) of tin oxides and subsequent sulfurization. Well-crystallized and aligned SnS2 layers parallel to the substrate are demonstrated through the phase engineering of the ALD-grown tin oxide and the substrate surface. The additional H2S plasma treatment at 300 °C leads to the formation of stoichiometric SnS2. The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture. The present results could be a step toward the realization of 2D metal dichalcogenides in industry.

Original languageEnglish
Pages (from-to)17712-17721
Number of pages10
JournalNanoscale
Volume10
Issue number37
DOIs
Publication statusPublished - 2018 Oct 7

Fingerprint

Metals
Atomic layer deposition
Tin oxides
Temperature
Substrates
Industrial applications
Plasmas
Thin films
Industry
stannic oxide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Pyeon, J. J., Baek, I. H., Lim, W. C., Chae, K. H., Han, S. H., Lee, G. Y., ... Kim, S. K. (2018). Low-temperature wafer-scale synthesis of two-dimensional SnS2 Nanoscale, 10(37), 17712-17721. https://doi.org/10.1039/c8nr05450a

Low-temperature wafer-scale synthesis of two-dimensional SnS2 . / Pyeon, Jung Joon; Baek, In Hwan; Lim, Weon Cheol; Chae, Keun Hwa; Han, Seong Ho; Lee, Ga Yeon; Baek, Seung Hyub; Kim, Jin Sang; Choi, Ji Won; Chung, Taek Mo; Han, Jeong Hwan; Kang, Chong-Yun; Kim, Seong Keun.

In: Nanoscale, Vol. 10, No. 37, 07.10.2018, p. 17712-17721.

Research output: Contribution to journalArticle

Pyeon, JJ, Baek, IH, Lim, WC, Chae, KH, Han, SH, Lee, GY, Baek, SH, Kim, JS, Choi, JW, Chung, TM, Han, JH, Kang, C-Y & Kim, SK 2018, 'Low-temperature wafer-scale synthesis of two-dimensional SnS2 ', Nanoscale, vol. 10, no. 37, pp. 17712-17721. https://doi.org/10.1039/c8nr05450a
Pyeon JJ, Baek IH, Lim WC, Chae KH, Han SH, Lee GY et al. Low-temperature wafer-scale synthesis of two-dimensional SnS2 Nanoscale. 2018 Oct 7;10(37):17712-17721. https://doi.org/10.1039/c8nr05450a
Pyeon, Jung Joon ; Baek, In Hwan ; Lim, Weon Cheol ; Chae, Keun Hwa ; Han, Seong Ho ; Lee, Ga Yeon ; Baek, Seung Hyub ; Kim, Jin Sang ; Choi, Ji Won ; Chung, Taek Mo ; Han, Jeong Hwan ; Kang, Chong-Yun ; Kim, Seong Keun. / Low-temperature wafer-scale synthesis of two-dimensional SnS2 In: Nanoscale. 2018 ; Vol. 10, No. 37. pp. 17712-17721.
@article{72674d5d810a407bb64f13cc407155b3,
title = "Low-temperature wafer-scale synthesis of two-dimensional SnS2",
abstract = "Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.e., the low-temperature synthesis of wafer-scale, continuous, and orientation-controlled 2D metal dichalcogenides, still remains a significant challenge. Here, we report the low-temperature (≤350 °C) synthesis of uniform and continuous n-type SnS2 thin films via the combination of atomic layer deposition (ALD) of tin oxides and subsequent sulfurization. Well-crystallized and aligned SnS2 layers parallel to the substrate are demonstrated through the phase engineering of the ALD-grown tin oxide and the substrate surface. The additional H2S plasma treatment at 300 °C leads to the formation of stoichiometric SnS2. The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture. The present results could be a step toward the realization of 2D metal dichalcogenides in industry.",
author = "Pyeon, {Jung Joon} and Baek, {In Hwan} and Lim, {Weon Cheol} and Chae, {Keun Hwa} and Han, {Seong Ho} and Lee, {Ga Yeon} and Baek, {Seung Hyub} and Kim, {Jin Sang} and Choi, {Ji Won} and Chung, {Taek Mo} and Han, {Jeong Hwan} and Chong-Yun Kang and Kim, {Seong Keun}",
year = "2018",
month = "10",
day = "7",
doi = "10.1039/c8nr05450a",
language = "English",
volume = "10",
pages = "17712--17721",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "37",

}

TY - JOUR

T1 - Low-temperature wafer-scale synthesis of two-dimensional SnS2

AU - Pyeon, Jung Joon

AU - Baek, In Hwan

AU - Lim, Weon Cheol

AU - Chae, Keun Hwa

AU - Han, Seong Ho

AU - Lee, Ga Yeon

AU - Baek, Seung Hyub

AU - Kim, Jin Sang

AU - Choi, Ji Won

AU - Chung, Taek Mo

AU - Han, Jeong Hwan

AU - Kang, Chong-Yun

AU - Kim, Seong Keun

PY - 2018/10/7

Y1 - 2018/10/7

N2 - Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.e., the low-temperature synthesis of wafer-scale, continuous, and orientation-controlled 2D metal dichalcogenides, still remains a significant challenge. Here, we report the low-temperature (≤350 °C) synthesis of uniform and continuous n-type SnS2 thin films via the combination of atomic layer deposition (ALD) of tin oxides and subsequent sulfurization. Well-crystallized and aligned SnS2 layers parallel to the substrate are demonstrated through the phase engineering of the ALD-grown tin oxide and the substrate surface. The additional H2S plasma treatment at 300 °C leads to the formation of stoichiometric SnS2. The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture. The present results could be a step toward the realization of 2D metal dichalcogenides in industry.

AB - Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.e., the low-temperature synthesis of wafer-scale, continuous, and orientation-controlled 2D metal dichalcogenides, still remains a significant challenge. Here, we report the low-temperature (≤350 °C) synthesis of uniform and continuous n-type SnS2 thin films via the combination of atomic layer deposition (ALD) of tin oxides and subsequent sulfurization. Well-crystallized and aligned SnS2 layers parallel to the substrate are demonstrated through the phase engineering of the ALD-grown tin oxide and the substrate surface. The additional H2S plasma treatment at 300 °C leads to the formation of stoichiometric SnS2. The formation of conformal SnS2 layers over a three-dimensional undulating hole structure is confirmed, which reveals the potential for applications beyond the planar structured architecture. The present results could be a step toward the realization of 2D metal dichalcogenides in industry.

UR - http://www.scopus.com/inward/record.url?scp=85054268273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054268273&partnerID=8YFLogxK

U2 - 10.1039/c8nr05450a

DO - 10.1039/c8nr05450a

M3 - Article

C2 - 30209458

AN - SCOPUS:85054268273

VL - 10

SP - 17712

EP - 17721

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 37

ER -