Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have demonstrated high-performance InGaN-GaN multiple quantum-wells light-emitting diodes (LEDs) using polarization-induced (PI) p-InGaN-GaN superlattice. Electrical measurements show that PI LEDs produce much lower series resistance and turn-on voltage (at 20 mA) as compared to those of normal LEDs without the superlattice. It is also shown that the output power and photon wavelength of the PI LEDs remain electrically stable up to a high stress region of 200 mA. However, those of normal LEDs become electrically and optically degraded in excess of 120 mA. These results show that the use of the PI effect is very effective to the improvement of the electrical properties of LEDs.

Original languageEnglish
Article number1650272
Pages (from-to)1536-1538
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number14
DOIs
Publication statusPublished - 2006 Jul 15

Fingerprint

Light emitting diodes
light emitting diodes
Polarization
Electric potential
electric potential
polarization
electrical measurement
Semiconductor quantum wells
Electric properties
Photons
electrical properties
quantum wells
Wavelength
output
photons
wavelengths

Keywords

  • Index terms-ingan-gan superlattice
  • Light-emitting diode (led)
  • Oxidized ni-au scheme
  • Polarization-induced effect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice. / Jang, Ja Soon; Kim, Donghwan; Seong, Tae Yeon.

In: IEEE Photonics Technology Letters, Vol. 18, No. 14, 1650272, 15.07.2006, p. 1536-1538.

Research output: Contribution to journalArticle

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