Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k bi 5Nb 3O 15 hybrid dielectric for phototransistor

Seongpil Chang, Myung Ho Chung, Jae Hong Kwon, Sang II Shin, Tae Yeon Oh, Ki Young Dong, Seung Jun Lee, Kyung Hoon Cho, Sahn Nahm, Byeong Kwon Ju

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

This paper describes the fabrication of pentacenethin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi 5Nb 3O 15. A 300-nm-thick Bi 5Nb 3O 15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi 5Nb 3O 15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (∼-5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm 2/Vs, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V G = 0 V under 100 mW/cm 2 AM 1.5 illumination.

Original languageEnglish
Pages (from-to)3355-3359
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

Fingerprint

Phototransistors
phototransistors
Semiconductors
Semiconducting organic compounds
Thin film transistors
low voltage
Dielectric devices
transistors
Dielectric films
Gate dielectrics
Electric potential
thin films
Lighting
organic semiconductors
Transistors
Permittivity
Fabrication
Equipment and Supplies
Temperature
illumination

Keywords

  • Bi Nb O
  • Hybrid gate dielectric
  • Low voltage
  • Organic thin film transistor
  • Pentacene
  • Photoresponse
  • Poly(4-vinylphenol)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k bi 5Nb 3O 15 hybrid dielectric for phototransistor. / Chang, Seongpil; Chung, Myung Ho; Kwon, Jae Hong; Shin, Sang II; Oh, Tae Yeon; Dong, Ki Young; Lee, Seung Jun; Cho, Kyung Hoon; Nahm, Sahn; Ju, Byeong Kwon.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 06.07.2012, p. 3355-3359.

Research output: Contribution to journal › Article

Chang, S, Chung, MH, Kwon, JH, Shin, SII, Oh, TY, Dong, KY, Lee, SJ, Cho, KH, Nahm, S & Ju, BK 2012, 'Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k bi 5Nb 3O 15 hybrid dielectric for phototransistor', Journal of Nanoscience and Nanotechnology, vol. 12, no. 4, pp. 3355-3359. https://doi.org/10.1166/jnn.2012.5640
Chang S, Chung MH, Kwon JH, Shin SII, Oh TY, Dong KY et al. Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k bi 5Nb 3O 15 hybrid dielectric for phototransistor. Journal of Nanoscience and Nanotechnology. 2012 Jul 6;12(4):3355-3359. https://doi.org/10.1166/jnn.2012.5640
Chang, Seongpil ; Chung, Myung Ho ; Kwon, Jae Hong ; Shin, Sang II ; Oh, Tae Yeon ; Dong, Ki Young ; Lee, Seung Jun ; Cho, Kyung Hoon ; Nahm, Sahn ; Ju, Byeong Kwon. / Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k bi 5Nb 3O 15 hybrid dielectric for phototransistor. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 4. pp. 3355-3359.
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abstract = "This paper describes the fabrication of pentacenethin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi 5Nb 3O 15. A 300-nm-thick Bi 5Nb 3O 15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi 5Nb 3O 15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (∼-5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm 2/Vs, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V G = 0 V under 100 mW/cm 2 AM 1.5 illumination.",
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AU - Dong, Ki Young

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