Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k bi 5Nb 3O 15 hybrid dielectric for phototransistor

Seongpil Chang, Myung Ho Chung, Jae Hong Kwon, Sang II Shin, Tae Yeon Oh, Ki Young Dong, Seung Jun Lee, Kyung Hoon Cho, Sahn Nahm, Byeong Kwon Ju

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Abstract

This paper describes the fabrication of pentacenethin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi 5Nb 3O 15. A 300-nm-thick Bi 5Nb 3O 15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi 5Nb 3O 15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (∼-5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm 2/Vs, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V G = 0 V under 100 mW/cm 2 AM 1.5 illumination.

Original languageEnglish
Pages (from-to)3355-3359
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

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Keywords

  • Bi Nb O
  • Hybrid gate dielectric
  • Low voltage
  • Organic thin film transistor
  • Pentacene
  • Photoresponse
  • Poly(4-vinylphenol)

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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