Abstract
This paper describes the fabrication of pentacenethin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi 5Nb 3O 15. A 300-nm-thick Bi 5Nb 3O 15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi 5Nb 3O 15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (∼-5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm 2/Vs, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V G = 0 V under 100 mW/cm 2 AM 1.5 illumination.
Original language | English |
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Pages (from-to) | 3355-3359 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 12 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2012 |
Keywords
- Bi Nb O
- Hybrid gate dielectric
- Low voltage
- Organic thin film transistor
- Pentacene
- Photoresponse
- Poly(4-vinylphenol)
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics