Abstract
We report on high-performance polymeric field-effect transistors (PFETs) operating at low voltages (Vop) using a self-assembled monolayer (SAM)-passivated HfOx dielectric layer. A diketopyrrolopyrrole and quaterthiophene-based copolymer (PDPP2DT-T2) was spin-coated in air as an active channel material on top of a HfOx gate dielectric that was passivated with n-octyltrichlorosilane (OTS), n-octadecyltrichlorosilane (ODTS), and n-dodecylphosphonic acid (PAC12) SAMs. The high capacitance and low leakage current of the SAM-passivated HfOx dielectrics enabled the devices to operate at |Vop| of less than 4 V. In particular, the PFETs using ODTS-passivated HfOx demonstrated a high hole mobility (μeff h) of 1.98 cm2 V−1 s−1, a current on/off ratio of 1.4 × 104, and a threshold voltage of −0.8 V despite the fact that the device fabrication and all measurements were conducted under ambient conditions without encapsulation. Moreover, the μeff h value observed in this study is the best for high-k-dielectric-based low-voltage PFETs reported to date. This work demonstrates that our facile modification of high-k dielectrics with SAMs is a highly effective method for realizing high-performance semiconducting copolymer-based transistors working at a low Vop regime with low power consumption.
| Original language | English |
|---|---|
| Pages (from-to) | 135-143 |
| Number of pages | 9 |
| Journal | Organic Electronics: physics, materials, applications |
| Volume | 74 |
| DOIs | |
| Publication status | Published - 2019 Nov 1 |
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Keywords
- Carrier mobility
- Conjugated polymers
- Crystallinity
- Organic electronics
- Polymer field effect transistors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Low-voltage, high-performance polymeric field-effect transistors based on self-assembled monolayer-passivated HfOx dielectrics : Correlation between trap density, carrier mobility, and operation voltage. / Kim, Dae Kyu; Lee, Myeongjae; Kim, Bong Soo; Choi, Jong-Ho.
In: Organic Electronics: physics, materials, applications, Vol. 74, 01.11.2019, p. 135-143.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-voltage, high-performance polymeric field-effect transistors based on self-assembled monolayer-passivated HfOx dielectrics
T2 - Correlation between trap density, carrier mobility, and operation voltage
AU - Kim, Dae Kyu
AU - Lee, Myeongjae
AU - Kim, Bong Soo
AU - Choi, Jong-Ho
PY - 2019/11/1
Y1 - 2019/11/1
N2 - We report on high-performance polymeric field-effect transistors (PFETs) operating at low voltages (Vop) using a self-assembled monolayer (SAM)-passivated HfOx dielectric layer. A diketopyrrolopyrrole and quaterthiophene-based copolymer (PDPP2DT-T2) was spin-coated in air as an active channel material on top of a HfOx gate dielectric that was passivated with n-octyltrichlorosilane (OTS), n-octadecyltrichlorosilane (ODTS), and n-dodecylphosphonic acid (PAC12) SAMs. The high capacitance and low leakage current of the SAM-passivated HfOx dielectrics enabled the devices to operate at |Vop| of less than 4 V. In particular, the PFETs using ODTS-passivated HfOx demonstrated a high hole mobility (μeff h) of 1.98 cm2 V−1 s−1, a current on/off ratio of 1.4 × 104, and a threshold voltage of −0.8 V despite the fact that the device fabrication and all measurements were conducted under ambient conditions without encapsulation. Moreover, the μeff h value observed in this study is the best for high-k-dielectric-based low-voltage PFETs reported to date. This work demonstrates that our facile modification of high-k dielectrics with SAMs is a highly effective method for realizing high-performance semiconducting copolymer-based transistors working at a low Vop regime with low power consumption.
AB - We report on high-performance polymeric field-effect transistors (PFETs) operating at low voltages (Vop) using a self-assembled monolayer (SAM)-passivated HfOx dielectric layer. A diketopyrrolopyrrole and quaterthiophene-based copolymer (PDPP2DT-T2) was spin-coated in air as an active channel material on top of a HfOx gate dielectric that was passivated with n-octyltrichlorosilane (OTS), n-octadecyltrichlorosilane (ODTS), and n-dodecylphosphonic acid (PAC12) SAMs. The high capacitance and low leakage current of the SAM-passivated HfOx dielectrics enabled the devices to operate at |Vop| of less than 4 V. In particular, the PFETs using ODTS-passivated HfOx demonstrated a high hole mobility (μeff h) of 1.98 cm2 V−1 s−1, a current on/off ratio of 1.4 × 104, and a threshold voltage of −0.8 V despite the fact that the device fabrication and all measurements were conducted under ambient conditions without encapsulation. Moreover, the μeff h value observed in this study is the best for high-k-dielectric-based low-voltage PFETs reported to date. This work demonstrates that our facile modification of high-k dielectrics with SAMs is a highly effective method for realizing high-performance semiconducting copolymer-based transistors working at a low Vop regime with low power consumption.
KW - Carrier mobility
KW - Conjugated polymers
KW - Crystallinity
KW - Organic electronics
KW - Polymer field effect transistors
UR - http://www.scopus.com/inward/record.url?scp=85068409148&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068409148&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2019.06.036
DO - 10.1016/j.orgel.2019.06.036
M3 - Article
AN - SCOPUS:85068409148
VL - 74
SP - 135
EP - 143
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
ER -