TY - JOUR
T1 - Low-voltage, high-performance polymeric field-effect transistors based on self-assembled monolayer-passivated HfOx dielectrics
T2 - Correlation between trap density, carrier mobility, and operation voltage
AU - Kim, Dae Kyu
AU - Lee, Myeongjae
AU - Kim, Bong Soo
AU - Choi, Jong Ho
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education ( NRF20100020209 and NRF2017R1D1A1B03027893 ), and also supported by grants ( NRF2015M1A2A2056218 and NRF2018R1A5A1025594 ) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science and ICT .
Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education (NRF20100020209 and NRF2017R1D1A1B03027893), and also supported by grants (NRF2015M1A2A2056218 and NRF2018R1A5A1025594) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science and ICT.
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/11
Y1 - 2019/11
N2 - We report on high-performance polymeric field-effect transistors (PFETs) operating at low voltages (Vop) using a self-assembled monolayer (SAM)-passivated HfOx dielectric layer. A diketopyrrolopyrrole and quaterthiophene-based copolymer (PDPP2DT-T2) was spin-coated in air as an active channel material on top of a HfOx gate dielectric that was passivated with n-octyltrichlorosilane (OTS), n-octadecyltrichlorosilane (ODTS), and n-dodecylphosphonic acid (PAC12) SAMs. The high capacitance and low leakage current of the SAM-passivated HfOx dielectrics enabled the devices to operate at |Vop| of less than 4 V. In particular, the PFETs using ODTS-passivated HfOx demonstrated a high hole mobility (μeff h) of 1.98 cm2 V−1 s−1, a current on/off ratio of 1.4 × 104, and a threshold voltage of −0.8 V despite the fact that the device fabrication and all measurements were conducted under ambient conditions without encapsulation. Moreover, the μeff h value observed in this study is the best for high-k-dielectric-based low-voltage PFETs reported to date. This work demonstrates that our facile modification of high-k dielectrics with SAMs is a highly effective method for realizing high-performance semiconducting copolymer-based transistors working at a low Vop regime with low power consumption.
AB - We report on high-performance polymeric field-effect transistors (PFETs) operating at low voltages (Vop) using a self-assembled monolayer (SAM)-passivated HfOx dielectric layer. A diketopyrrolopyrrole and quaterthiophene-based copolymer (PDPP2DT-T2) was spin-coated in air as an active channel material on top of a HfOx gate dielectric that was passivated with n-octyltrichlorosilane (OTS), n-octadecyltrichlorosilane (ODTS), and n-dodecylphosphonic acid (PAC12) SAMs. The high capacitance and low leakage current of the SAM-passivated HfOx dielectrics enabled the devices to operate at |Vop| of less than 4 V. In particular, the PFETs using ODTS-passivated HfOx demonstrated a high hole mobility (μeff h) of 1.98 cm2 V−1 s−1, a current on/off ratio of 1.4 × 104, and a threshold voltage of −0.8 V despite the fact that the device fabrication and all measurements were conducted under ambient conditions without encapsulation. Moreover, the μeff h value observed in this study is the best for high-k-dielectric-based low-voltage PFETs reported to date. This work demonstrates that our facile modification of high-k dielectrics with SAMs is a highly effective method for realizing high-performance semiconducting copolymer-based transistors working at a low Vop regime with low power consumption.
KW - Carrier mobility
KW - Conjugated polymers
KW - Crystallinity
KW - Organic electronics
KW - Polymer field effect transistors
UR - http://www.scopus.com/inward/record.url?scp=85068409148&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2019.06.036
DO - 10.1016/j.orgel.2019.06.036
M3 - Article
AN - SCOPUS:85068409148
VL - 74
SP - 135
EP - 143
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
ER -