Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

Leeseung Kang, Hye Lan An, Seungmin Jung, Seyul Kim, Sahn Nahm, Dae guen Kim, Chan Gi Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca2Nb3O10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10−7 A cm−2) and a high capacitance density of 944 nF cm−2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, Ion/Ioff current ratio of 106, subthreshold slope of 0.05 V dec−1, and high mobility of 0.428 cm2 V−1 s−1 at operating voltages less than 2 V.

Original languageEnglish
Pages (from-to)374-377
Number of pages4
JournalApplied Surface Science
Volume476
DOIs
Publication statusPublished - 2019 May 15

Fingerprint

Nanosheets
Thin film transistors
Electric potential
Multilayer films
Substrates
Threshold voltage
Nanostructured materials
Leakage currents
Monolayers
Capacitance
Current density
Deposits
Ions
Thin films
Molecules
Water
Air

Keywords

  • CaNbO nanosheets
  • CdS active layer
  • Low-voltage operating
  • Thin-film transistor

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator. / Kang, Leeseung; An, Hye Lan; Jung, Seungmin; Kim, Seyul; Nahm, Sahn; Kim, Dae guen; Lee, Chan Gi.

In: Applied Surface Science, Vol. 476, 15.05.2019, p. 374-377.

Research output: Contribution to journalArticle

Kang, Leeseung ; An, Hye Lan ; Jung, Seungmin ; Kim, Seyul ; Nahm, Sahn ; Kim, Dae guen ; Lee, Chan Gi. / Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator. In: Applied Surface Science. 2019 ; Vol. 476. pp. 374-377.
@article{6ef50c27f4634f068c5ddb2ea759ca44,
title = "Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator",
abstract = "One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca2Nb3O10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10−7 A cm−2) and a high capacitance density of 944 nF cm−2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, Ion/Ioff current ratio of 106, subthreshold slope of 0.05 V dec−1, and high mobility of 0.428 cm2 V−1 s−1 at operating voltages less than 2 V.",
keywords = "CaNbO nanosheets, CdS active layer, Low-voltage operating, Thin-film transistor",
author = "Leeseung Kang and An, {Hye Lan} and Seungmin Jung and Seyul Kim and Sahn Nahm and Kim, {Dae guen} and Lee, {Chan Gi}",
year = "2019",
month = "5",
day = "15",
doi = "10.1016/j.apsusc.2019.01.132",
language = "English",
volume = "476",
pages = "374--377",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

AU - Kang, Leeseung

AU - An, Hye Lan

AU - Jung, Seungmin

AU - Kim, Seyul

AU - Nahm, Sahn

AU - Kim, Dae guen

AU - Lee, Chan Gi

PY - 2019/5/15

Y1 - 2019/5/15

N2 - One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca2Nb3O10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10−7 A cm−2) and a high capacitance density of 944 nF cm−2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, Ion/Ioff current ratio of 106, subthreshold slope of 0.05 V dec−1, and high mobility of 0.428 cm2 V−1 s−1 at operating voltages less than 2 V.

AB - One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca2Nb3O10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10−7 A cm−2) and a high capacitance density of 944 nF cm−2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, Ion/Ioff current ratio of 106, subthreshold slope of 0.05 V dec−1, and high mobility of 0.428 cm2 V−1 s−1 at operating voltages less than 2 V.

KW - CaNbO nanosheets

KW - CdS active layer

KW - Low-voltage operating

KW - Thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=85060198806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060198806&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.01.132

DO - 10.1016/j.apsusc.2019.01.132

M3 - Article

AN - SCOPUS:85060198806

VL - 476

SP - 374

EP - 377

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -