Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

Leeseung Kang, Hye Lan An, Seungmin Jung, Seyul Kim, Sahn Nahm, Dae guen Kim, Chan Gi Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)


One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca2Nb3O10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10−7 A cm−2) and a high capacitance density of 944 nF cm−2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, Ion/Ioff current ratio of 106, subthreshold slope of 0.05 V dec−1, and high mobility of 0.428 cm2 V−1 s−1 at operating voltages less than 2 V.

Original languageEnglish
Pages (from-to)374-377
Number of pages4
JournalApplied Surface Science
Publication statusPublished - 2019 May 15


  • CaNbO nanosheets
  • CdS active layer
  • Low-voltage operating
  • Thin-film transistor

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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