Low-voltage operating solution-processed CdS thin-film transistor with Ca 2 Nb 3 O 10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

Leeseung Kang, Hye Lan An, Seungmin Jung, Seyul Kim, Sahn Nahm, Dae guen Kim, Chan Gi Lee

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Engineering & Materials Science

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