Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics

Jang Woon Kim, Jeong Do Oh, Dae Kyu Kim, Han Young Lee, Young Geun Ha, Jong-Ho Choi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Low-voltage organic field-effect transistors (OFETs) and complementary metal oxide semiconductor (CMOS) inverters based on pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were fabricated on HfTiOx gate dielectrics. Both pristine dielectrics and substrates passivated with self-assembled monolayers (SAMs) of n-dodecylphosphonic acid (PA-C12) were employed. The high capacitance and low leakage current of the HfTiOx-based dielectrics enabled the devices to operate at |V| < 3 V. Passivation with PA-C12 was highly effective in improving the device characteristics. In particular, an electron mobility of 0.72 cm2 V-1 s-1 was measured for the device fabricated with the passivated HfTiOx dielectric, which represents the best performance reported to date for perylene-based OFETs prepared with thin, high-k gate dielectrics. The CMOS inverters exhibited fast switching and high gain characteristics, which were attributed to good coupling between the optimized p- and n-type OFETs.

Original languageEnglish
Pages (from-to)7999-8005
Number of pages7
JournalJournal of Materials Chemistry C
Volume4
Issue number34
DOIs
Publication statusPublished - 2016

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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