Abstract
Low-voltage organic field-effect transistors (OFETs) and complementary metal oxide semiconductor (CMOS) inverters based on pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were fabricated on HfTiOx gate dielectrics. Both pristine dielectrics and substrates passivated with self-assembled monolayers (SAMs) of n-dodecylphosphonic acid (PA-C12) were employed. The high capacitance and low leakage current of the HfTiOx-based dielectrics enabled the devices to operate at |V| < 3 V. Passivation with PA-C12 was highly effective in improving the device characteristics. In particular, an electron mobility of 0.72 cm2 V-1 s-1 was measured for the device fabricated with the passivated HfTiOx dielectric, which represents the best performance reported to date for perylene-based OFETs prepared with thin, high-k gate dielectrics. The CMOS inverters exhibited fast switching and high gain characteristics, which were attributed to good coupling between the optimized p- and n-type OFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 7999-8005 |
| Number of pages | 7 |
| Journal | Journal of Materials Chemistry C |
| Volume | 4 |
| Issue number | 34 |
| DOIs | |
| Publication status | Published - 2016 |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Chemistry
Cite this
Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics. / Kim, Jang Woon; Oh, Jeong Do; Kim, Dae Kyu; Lee, Han Young; Ha, Young Geun; Choi, Jong-Ho.
In: Journal of Materials Chemistry C, Vol. 4, No. 34, 2016, p. 7999-8005.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-voltage organic devices based on pristine and self-assembled monolayer-treated HfTiOx gate dielectrics
AU - Kim, Jang Woon
AU - Oh, Jeong Do
AU - Kim, Dae Kyu
AU - Lee, Han Young
AU - Ha, Young Geun
AU - Choi, Jong-Ho
PY - 2016
Y1 - 2016
N2 - Low-voltage organic field-effect transistors (OFETs) and complementary metal oxide semiconductor (CMOS) inverters based on pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were fabricated on HfTiOx gate dielectrics. Both pristine dielectrics and substrates passivated with self-assembled monolayers (SAMs) of n-dodecylphosphonic acid (PA-C12) were employed. The high capacitance and low leakage current of the HfTiOx-based dielectrics enabled the devices to operate at |V| < 3 V. Passivation with PA-C12 was highly effective in improving the device characteristics. In particular, an electron mobility of 0.72 cm2 V-1 s-1 was measured for the device fabricated with the passivated HfTiOx dielectric, which represents the best performance reported to date for perylene-based OFETs prepared with thin, high-k gate dielectrics. The CMOS inverters exhibited fast switching and high gain characteristics, which were attributed to good coupling between the optimized p- and n-type OFETs.
AB - Low-voltage organic field-effect transistors (OFETs) and complementary metal oxide semiconductor (CMOS) inverters based on pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were fabricated on HfTiOx gate dielectrics. Both pristine dielectrics and substrates passivated with self-assembled monolayers (SAMs) of n-dodecylphosphonic acid (PA-C12) were employed. The high capacitance and low leakage current of the HfTiOx-based dielectrics enabled the devices to operate at |V| < 3 V. Passivation with PA-C12 was highly effective in improving the device characteristics. In particular, an electron mobility of 0.72 cm2 V-1 s-1 was measured for the device fabricated with the passivated HfTiOx dielectric, which represents the best performance reported to date for perylene-based OFETs prepared with thin, high-k gate dielectrics. The CMOS inverters exhibited fast switching and high gain characteristics, which were attributed to good coupling between the optimized p- and n-type OFETs.
UR - http://www.scopus.com/inward/record.url?scp=84984813394&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84984813394&partnerID=8YFLogxK
U2 - 10.1039/c6tc02851a
DO - 10.1039/c6tc02851a
M3 - Article
AN - SCOPUS:84984813394
VL - 4
SP - 7999
EP - 8005
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 34
ER -