Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics

Dae Kyu Kim, Jong-Ho Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages |Vop| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry decreased the device-operating voltages. Crystalline organic active layers of pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) acted as p-and n-type materials, respectively. 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped onto a tris(8-hydroxyquinoline) aluminum (Alq3:DCM) layer was used as a light-emitting medium to enhance the luminescence efficiency. Based on a tri-layered structure with balanced ambipolar transports and the combined high capacitance-low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs demonstrated good device performance with light emission at |Vop| < 10 V. The transistor characteristics and operating light-emission mechanisms were discussed based on the EL images acquired using a charge-coupled device (CCD) camera under ambient conditions.

Original languageEnglish
Pages (from-to)287-294
Number of pages8
JournalOrganic Electronics: physics, materials, applications
Volume51
DOIs
Publication statusPublished - 2017 Dec 1

Fingerprint

Field effect transistors
low voltage
field effect transistors
Light emission
Self assembled monolayers
acids
Acids
light emission
Electric potential
Pyrans
CCD cameras
Leakage currents
Sol-gels
Luminescence
charge coupled devices
Transistors
leakage
Capacitance
transistors
capacitance

Keywords

  • HfO dielectrics
  • Low voltages operation
  • n-Dodecylphosphonic acid (PA-C12)
  • Operating lightemission mechanisms
  • Organic light-emitting field effect transistors (OLEFETs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{5778b0c8d5b3486ca497dc8baee4d917,
title = "Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics",
abstract = "In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages |Vop| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry decreased the device-operating voltages. Crystalline organic active layers of pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) acted as p-and n-type materials, respectively. 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped onto a tris(8-hydroxyquinoline) aluminum (Alq3:DCM) layer was used as a light-emitting medium to enhance the luminescence efficiency. Based on a tri-layered structure with balanced ambipolar transports and the combined high capacitance-low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs demonstrated good device performance with light emission at |Vop| < 10 V. The transistor characteristics and operating light-emission mechanisms were discussed based on the EL images acquired using a charge-coupled device (CCD) camera under ambient conditions.",
keywords = "HfO dielectrics, Low voltages operation, n-Dodecylphosphonic acid (PA-C12), Operating lightemission mechanisms, Organic light-emitting field effect transistors (OLEFETs)",
author = "Kim, {Dae Kyu} and Jong-Ho Choi",
year = "2017",
month = "12",
day = "1",
doi = "10.1016/j.orgel.2017.09.026",
language = "English",
volume = "51",
pages = "287--294",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",

}

TY - JOUR

T1 - Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics

AU - Kim, Dae Kyu

AU - Choi, Jong-Ho

PY - 2017/12/1

Y1 - 2017/12/1

N2 - In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages |Vop| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry decreased the device-operating voltages. Crystalline organic active layers of pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) acted as p-and n-type materials, respectively. 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped onto a tris(8-hydroxyquinoline) aluminum (Alq3:DCM) layer was used as a light-emitting medium to enhance the luminescence efficiency. Based on a tri-layered structure with balanced ambipolar transports and the combined high capacitance-low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs demonstrated good device performance with light emission at |Vop| < 10 V. The transistor characteristics and operating light-emission mechanisms were discussed based on the EL images acquired using a charge-coupled device (CCD) camera under ambient conditions.

AB - In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages |Vop| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry decreased the device-operating voltages. Crystalline organic active layers of pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) acted as p-and n-type materials, respectively. 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped onto a tris(8-hydroxyquinoline) aluminum (Alq3:DCM) layer was used as a light-emitting medium to enhance the luminescence efficiency. Based on a tri-layered structure with balanced ambipolar transports and the combined high capacitance-low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs demonstrated good device performance with light emission at |Vop| < 10 V. The transistor characteristics and operating light-emission mechanisms were discussed based on the EL images acquired using a charge-coupled device (CCD) camera under ambient conditions.

KW - HfO dielectrics

KW - Low voltages operation

KW - n-Dodecylphosphonic acid (PA-C12)

KW - Operating lightemission mechanisms

KW - Organic light-emitting field effect transistors (OLEFETs)

UR - http://www.scopus.com/inward/record.url?scp=85029708503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029708503&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2017.09.026

DO - 10.1016/j.orgel.2017.09.026

M3 - Article

AN - SCOPUS:85029708503

VL - 51

SP - 287

EP - 294

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

ER -