Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics

Dae Kyu Kim, Jong-Ho Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages |Vop| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry decreased the device-operating voltages. Crystalline organic active layers of pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) acted as p-and n-type materials, respectively. 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped onto a tris(8-hydroxyquinoline) aluminum (Alq3:DCM) layer was used as a light-emitting medium to enhance the luminescence efficiency. Based on a tri-layered structure with balanced ambipolar transports and the combined high capacitance-low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs demonstrated good device performance with light emission at |Vop| < 10 V. The transistor characteristics and operating light-emission mechanisms were discussed based on the EL images acquired using a charge-coupled device (CCD) camera under ambient conditions.

Original languageEnglish
Pages (from-to)287-294
Number of pages8
JournalOrganic Electronics: physics, materials, applications
Volume51
DOIs
Publication statusPublished - 2017 Dec 1

Keywords

  • HfO dielectrics
  • Low voltages operation
  • n-Dodecylphosphonic acid (PA-C12)
  • Operating lightemission mechanisms
  • Organic light-emitting field effect transistors (OLEFETs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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