Low-voltage organic transistors and inverters using HfOx dielectrics

Jeong Do Oh, Jang Woon Kim, Dae Kyu Kim, Jong-Ho Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Based on the p-type pentacene and n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13), low-voltage organic field-effect transistors (OFETs) and inverters using hafnium (Hf)-based dielectrics were produced and characterized. All the pristine and cyclic olefin copolymer (COC)-passivated HfOx gate dielectrics were deposited by the solution-processed sol-gel chemistry, and organic thin films were deposited on the dielectrics by the neutral cluster beam deposition method. In comparison to the pristine HfOx-based OFETs, the COC-passivated transistors showed better device performance: higher hole and electron mobilities, reduced hysteresis, decreased trap densities, and particularly improved operational stability of n-type transistors. The inverters composed of the optimized p- and n-type OFETs with the asymmetric Au and LiF/Al electrodes using COC-passivated HfOx dielectrics exhibited high gains and good noise margins under ambient conditions.

Original languageEnglish
Pages (from-to)131-135
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume30
DOIs
Publication statusPublished - 2016 Mar 1

Keywords

  • Complementary metal oxide semiconductor (CMOS) inverters
  • Cyclic olefin copolymer (COC)
  • HfO dielectrics
  • Organic field-effect transistors (OFETs)

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Low-voltage organic transistors and inverters using HfO<sub>x</sub> dielectrics'. Together they form a unique fingerprint.

  • Cite this