Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics

Kwang Hwan Cho, Min Gyu Kang, Seung Min Oh, Chong Yun Kang, Youngpak Lee, Seok Jin Yoon

Research output: Contribution to journalArticle

13 Citations (Scopus)


We report the fabrication of ZnO based thin-film transistors (TFTs) with high-k gate insulator of Ti-substituted Bi1.5ZnNb1.5O 7 (BZN) films. (Bi1.5Zn0.5)(Zn 0.4Nb1.43Ti0.3O7) film deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at room temperature exhibits high dielectric constant of 73 at 100 kHz, while BZN film shows much lower dielectric constant of 50, respectively. The increasing dielectric constant with increasing Ti substitution can be attributed to the presence of a highly polarizable TiO6 octahedra and its strong correlation with the NbO6 octahedra. All room temperature processed ZnO based TFTs using Ti-substituted BZN gate insulator exhibited filed effect mobility of 0.75 cm2/Vs and low voltage device performance less than 2.5 V.

Original languageEnglish
Pages (from-to)6277-6279
Number of pages3
JournalThin Solid Films
Issue number22
Publication statusPublished - 2010 Sep 1
Externally publishedYes



  • Gate insulator
  • Ti-substituted Bi1.5ZnNb1.5O7
  • ZnO based thin-film transistors (TFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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