Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo; Mireille Mouis; Benjamin Piot; Sylvain Barraud; Minju Shin; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo, Mireille Mouis, Benjamin Piot, Sylvain Barraud, Minju Shin, Gyu Tae Kim, Gérard Ghibaudo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ_Eff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N _s) and corresponding Hall mobility (μ_Hall) Hall Effect measurements were carried out and compared to μ_Eff.

Original language	English
Title of host publication	2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
Publisher	IEEE Computer Society
Pages	85-88
Number of pages	4
ISBN (Print)	9781479948420
DOIs	https://doi.org/10.1109/WOLTE.2014.6881032
Publication status	Published - 2014
Event	11th International Workshop on Low Temperature Electronics, WOLTE 2014 - Grenoble, France Duration: 2014 Jul 7 → 2014 Jul 9

Publication series

Name	2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014

Other

Other	11th International Workshop on Low Temperature Electronics, WOLTE 2014
Country/Territory	France
City	Grenoble
Period	14/7/7 → 14/7/9

Keywords

Flat-band voltage
Hall Effect measurement
Junctionless transistor
Mobility
Split CV measurement

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/WOLTE.2014.6881032

Cite this

Joo, M. K., Mouis, M., Piot, B., Barraud, S., Shin, M., Kim, G. T., & Ghibaudo, G. (2014). Lowerature characterization of hall and effective mobility in junctionless transistors. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014 (pp. 85-88). [6881032] (2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014). IEEE Computer Society. https://doi.org/10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors. / Joo, Min Kyu; Mouis, Mireille; Piot, Benjamin et al.

2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014. IEEE Computer Society, 2014. p. 85-88 6881032 (2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Joo, MK, Mouis, M, Piot, B, Barraud, S, Shin, M, Kim, GT & Ghibaudo, G 2014, Lowerature characterization of hall and effective mobility in junctionless transistors. in 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014., 6881032, 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014, IEEE Computer Society, pp. 85-88, 11th International Workshop on Low Temperature Electronics, WOLTE 2014, Grenoble, France, 14/7/7. https://doi.org/10.1109/WOLTE.2014.6881032

Joo MK, Mouis M, Piot B, Barraud S, Shin M, Kim GT et al. Lowerature characterization of hall and effective mobility in junctionless transistors. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014. IEEE Computer Society. 2014. p. 85-88. 6881032. (2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014). https://doi.org/10.1109/WOLTE.2014.6881032

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title = "Lowerature characterization of hall and effective mobility in junctionless transistors",

abstract = "The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.",

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AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

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N2 - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.

AB - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.

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Lowerature characterization of hall and effective mobility in junctionless transistors

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