Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo, Mireille Mouis, Benjamin Piot, Sylvain Barraud, Minju Shin, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.

Original languageEnglish
Title of host publication2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
PublisherIEEE Computer Society
Pages85-88
Number of pages4
ISBN (Print)9781479948420
DOIs
Publication statusPublished - 2014 Jan 1
Event11th International Workshop on Low Temperature Electronics, WOLTE 2014 - Grenoble, France
Duration: 2014 Jul 72014 Jul 9

Other

Other11th International Workshop on Low Temperature Electronics, WOLTE 2014
CountryFrance
CityGrenoble
Period14/7/714/7/9

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Joo, M. K., Mouis, M., Piot, B., Barraud, S., Shin, M., Kim, G-T., & Ghibaudo, G. (2014). Lowerature characterization of hall and effective mobility in junctionless transistors. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014 (pp. 85-88). [6881032] IEEE Computer Society. https://doi.org/10.1109/WOLTE.2014.6881032