Abstract
The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.
| Original language | English |
|---|---|
| Title of host publication | 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014 |
| Publisher | IEEE Computer Society |
| Pages | 85-88 |
| Number of pages | 4 |
| ISBN (Print) | 9781479948420 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
| Event | 11th International Workshop on Low Temperature Electronics, WOLTE 2014 - Grenoble, France Duration: 2014 Jul 7 → 2014 Jul 9 |
Other
| Other | 11th International Workshop on Low Temperature Electronics, WOLTE 2014 |
|---|---|
| Country | France |
| City | Grenoble |
| Period | 14/7/7 → 14/7/9 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Lowerature characterization of hall and effective mobility in junctionless transistors. / Joo, Min Kyu; Mouis, Mireille; Piot, Benjamin; Barraud, Sylvain; Shin, Minju; Kim, Gyu-Tae; Ghibaudo, Gérard.
2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014. IEEE Computer Society, 2014. p. 85-88 6881032.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Lowerature characterization of hall and effective mobility in junctionless transistors
AU - Joo, Min Kyu
AU - Mouis, Mireille
AU - Piot, Benjamin
AU - Barraud, Sylvain
AU - Shin, Minju
AU - Kim, Gyu-Tae
AU - Ghibaudo, Gérard
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.
AB - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.
KW - Flat-band voltage
KW - Hall Effect measurement
KW - Junctionless transistor
KW - Mobility
KW - Split CV measurement
UR - http://www.scopus.com/inward/record.url?scp=84906762125&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906762125&partnerID=8YFLogxK
U2 - 10.1109/WOLTE.2014.6881032
DO - 10.1109/WOLTE.2014.6881032
M3 - Conference contribution
AN - SCOPUS:84906762125
SN - 9781479948420
SP - 85
EP - 88
BT - 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
PB - IEEE Computer Society
ER -