Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo; Mireille Mouis; Benjamin Piot; Sylvain Barraud; Minju Shin; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo, Mireille Mouis, Benjamin Piot, Sylvain Barraud, Minju Shin, Gyu Tae Kim, Gérard Ghibaudo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ_Eff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N _s) and corresponding Hall mobility (μ_Hall) Hall Effect measurements were carried out and compared to μ_Eff.

Original language	English
Title of host publication	2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
Publisher	IEEE Computer Society
Pages	85-88
Number of pages	4
ISBN (Print)	9781479948420
DOIs	https://doi.org/10.1109/WOLTE.2014.6881032
Publication status	Published - 2014
Event	11th International Workshop on Low Temperature Electronics, WOLTE 2014 - Grenoble, France Duration: 2014 Jul 7 → 2014 Jul 9

Publication series

Name	2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014

Other

Other	11th International Workshop on Low Temperature Electronics, WOLTE 2014
Country/Territory	France
City	Grenoble
Period	14/7/7 → 14/7/9

Keywords

Flat-band voltage
Hall Effect measurement
Junctionless transistor
Mobility
Split CV measurement

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/WOLTE.2014.6881032

Cite this

Joo, M. K., Mouis, M., Piot, B., Barraud, S., Shin, M., Kim, G. T., & Ghibaudo, G. (2014). Lowerature characterization of hall and effective mobility in junctionless transistors. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014 (pp. 85-88). [6881032] (2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014). IEEE Computer Society. https://doi.org/10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors. / Joo, Min Kyu; Mouis, Mireille; Piot, Benjamin et al.

2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014. IEEE Computer Society, 2014. p. 85-88 6881032 (2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Joo, MK, Mouis, M, Piot, B, Barraud, S, Shin, M, Kim, GT & Ghibaudo, G 2014, Lowerature characterization of hall and effective mobility in junctionless transistors. in 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014., 6881032, 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014, IEEE Computer Society, pp. 85-88, 11th International Workshop on Low Temperature Electronics, WOLTE 2014, Grenoble, France, 14/7/7. https://doi.org/10.1109/WOLTE.2014.6881032

Joo MK, Mouis M, Piot B, Barraud S, Shin M, Kim GT et al. Lowerature characterization of hall and effective mobility in junctionless transistors. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014. IEEE Computer Society. 2014. p. 85-88. 6881032. (2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014). doi: 10.1109/WOLTE.2014.6881032

@inproceedings{078a714835304c89a73cdce277d11e34,

title = "Lowerature characterization of hall and effective mobility in junctionless transistors",

abstract = "The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.",

keywords = "Flat-band voltage, Hall Effect measurement, Junctionless transistor, Mobility, Split CV measurement",

author = "Joo, {Min Kyu} and Mireille Mouis and Benjamin Piot and Sylvain Barraud and Minju Shin and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

year = "2014",

doi = "10.1109/WOLTE.2014.6881032",

language = "English",

isbn = "9781479948420",

series = "2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014",

publisher = "IEEE Computer Society",

pages = "85--88",

booktitle = "2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014",

}

TY - GEN

T1 - Lowerature characterization of hall and effective mobility in junctionless transistors

AU - Joo, Min Kyu

AU - Mouis, Mireille

AU - Piot, Benjamin

AU - Barraud, Sylvain

AU - Shin, Minju

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2014

Y1 - 2014

N2 - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.

AB - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.

KW - Flat-band voltage

KW - Hall Effect measurement

KW - Junctionless transistor

KW - Mobility

KW - Split CV measurement

UR - http://www.scopus.com/inward/record.url?scp=84906762125&partnerID=8YFLogxK

U2 - 10.1109/WOLTE.2014.6881032

DO - 10.1109/WOLTE.2014.6881032

M3 - Conference contribution

AN - SCOPUS:84906762125

SN - 9781479948420

T3 - 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014

SP - 85

EP - 88

BT - 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014

PB - IEEE Computer Society

T2 - 11th International Workshop on Low Temperature Electronics, WOLTE 2014

Y2 - 7 July 2014 through 9 July 2014

ER -

Lowerature characterization of hall and effective mobility in junctionless transistors

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this