Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo; Mireille Mouis; Benjamin Piot; Sylvain Barraud; Minju Shin; Gyu-Tae Kim; Gérard Ghibaudo

doi:10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo, Mireille Mouis, Benjamin Piot, Sylvain Barraud, Minju Shin, Gyu-Tae Kim, Gérard Ghibaudo

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ_Eff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N _s) and corresponding Hall mobility (μ_Hall) Hall Effect measurements were carried out and compared to μ_Eff.

Original language	English
Title of host publication	2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
Publisher	IEEE Computer Society
Pages	85-88
Number of pages	4
ISBN (Print)	9781479948420
DOIs	https://doi.org/10.1109/WOLTE.2014.6881032
Publication status	Published - 2014 Jan 1
Event	11th International Workshop on Low Temperature Electronics, WOLTE 2014 - Grenoble, France Duration: 2014 Jul 7 → 2014 Jul 9

Other

Other	11th International Workshop on Low Temperature Electronics, WOLTE 2014
Country	France
City	Grenoble
Period	14/7/7 → 14/7/9

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ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Joo, M. K., Mouis, M., Piot, B., Barraud, S., Shin, M., Kim, G-T., & Ghibaudo, G. (2014). Lowerature characterization of hall and effective mobility in junctionless transistors. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014 (pp. 85-88). [6881032] IEEE Computer Society. https://doi.org/10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors. / Joo, Min Kyu; Mouis, Mireille; Piot, Benjamin; Barraud, Sylvain; Shin, Minju; Kim, Gyu-Tae; Ghibaudo, Gérard.

2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014. IEEE Computer Society, 2014. p. 85-88 6881032.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Joo, MK, Mouis, M, Piot, B, Barraud, S, Shin, M, Kim, G-T & Ghibaudo, G 2014, Lowerature characterization of hall and effective mobility in junctionless transistors. in 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014., 6881032, IEEE Computer Society, pp. 85-88, 11th International Workshop on Low Temperature Electronics, WOLTE 2014, Grenoble, France, 14/7/7. https://doi.org/10.1109/WOLTE.2014.6881032

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abstract = "The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.",

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Access to Document

10.1109/WOLTE.2014.6881032