Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo; Mireille Mouis; Benjamin Piot; Sylvain Barraud; Minju Shin; Gyu-Tae Kim; Gérard Ghibaudo

doi:10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors

Min Kyu Joo, Mireille Mouis, Benjamin Piot, Sylvain Barraud, Minju Shin, Gyu-Tae Kim, Gérard Ghibaudo

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ_Eff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N _s) and corresponding Hall mobility (μ_Hall) Hall Effect measurements were carried out and compared to μ_Eff.

Original language	English
Title of host publication	2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014
Publisher	IEEE Computer Society
Pages	85-88
Number of pages	4
ISBN (Print)	9781479948420
DOIs	https://doi.org/10.1109/WOLTE.2014.6881032
Publication status	Published - 2014 Jan 1
Event	11th International Workshop on Low Temperature Electronics, WOLTE 2014 - Grenoble, France Duration: 2014 Jul 7 → 2014 Jul 9

Other

Other	11th International Workshop on Low Temperature Electronics, WOLTE 2014
Country	France
City	Grenoble
Period	14/7/7 → 14/7/9

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/WOLTE.2014.6881032

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Cite this

Joo, M. K., Mouis, M., Piot, B., Barraud, S., Shin, M., Kim, G-T., & Ghibaudo, G. (2014). Lowerature characterization of hall and effective mobility in junctionless transistors. In 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014 (pp. 85-88). [6881032] IEEE Computer Society. https://doi.org/10.1109/WOLTE.2014.6881032

Lowerature characterization of hall and effective mobility in junctionless transistors. / Joo, Min Kyu; Mouis, Mireille; Piot, Benjamin; Barraud, Sylvain; Shin, Minju; Kim, Gyu-Tae; Ghibaudo, Gérard.

2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014. IEEE Computer Society, 2014. p. 85-88 6881032.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Joo, MK, Mouis, M, Piot, B, Barraud, S, Shin, M, Kim, G-T & Ghibaudo, G 2014, Lowerature characterization of hall and effective mobility in junctionless transistors. in 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014., 6881032, IEEE Computer Society, pp. 85-88, 11th International Workshop on Low Temperature Electronics, WOLTE 2014, Grenoble, France, 14/7/7. https://doi.org/10.1109/WOLTE.2014.6881032

@inproceedings{078a714835304c89a73cdce277d11e34,

title = "Lowerature characterization of hall and effective mobility in junctionless transistors",

abstract = "The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.",

keywords = "Flat-band voltage, Hall Effect measurement, Junctionless transistor, Mobility, Split CV measurement",

author = "Joo, {Min Kyu} and Mireille Mouis and Benjamin Piot and Sylvain Barraud and Minju Shin and Gyu-Tae Kim and G{\'e}rard Ghibaudo",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/WOLTE.2014.6881032",

language = "English",

isbn = "9781479948420",

pages = "85--88",

booktitle = "2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014",

publisher = "IEEE Computer Society",

note = "11th International Workshop on Low Temperature Electronics, WOLTE 2014 ; Conference date: 07-07-2014 Through 09-07-2014",

}

TY - GEN

T1 - Lowerature characterization of hall and effective mobility in junctionless transistors

AU - Joo, Min Kyu

AU - Mouis, Mireille

AU - Piot, Benjamin

AU - Barraud, Sylvain

AU - Shin, Minju

AU - Kim, Gyu-Tae

AU - Ghibaudo, Gérard

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.

AB - The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N s) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.

KW - Flat-band voltage

KW - Hall Effect measurement

KW - Junctionless transistor

KW - Mobility

KW - Split CV measurement

UR - http://www.scopus.com/inward/record.url?scp=84906762125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906762125&partnerID=8YFLogxK

U2 - 10.1109/WOLTE.2014.6881032

DO - 10.1109/WOLTE.2014.6881032

M3 - Conference contribution

AN - SCOPUS:84906762125

SN - 9781479948420

SP - 85

EP - 88

BT - 2014 11th International Workshop on Low Temperature Electronics, WOLTE 2014

PB - IEEE Computer Society

T2 - 11th International Workshop on Low Temperature Electronics, WOLTE 2014

Y2 - 7 July 2014 through 9 July 2014

ER -