LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP

Dae Kon Oh, Kyung Soo Suh, Heungro Choo, Hong Man Kim, Kwang Eui Pyun, Hyoung Moo Park, Sahn Nahm

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Abstract

(InAs)m(GaAs)m(1 ≤ m ≤ 12) short period superlattices (SPSs) have been grown on semi-insulated InP substrates with a 200 nm InP cap layer using low pressure metalorganic chemical vapor deposition (MOCVD). According to double crystal x-ray diffraction and transmission electron microscopy results, the critical layer thickness of (InAs)m(GaAs)m SPS was observed to be ∼30Å (m = 5). For the SPS below the critical layer thickness, mirror-like surface morphology was found without defects, and strong intensity Fourier transformed photoluminescence (FT-PL) spectra were also obtained at room temperature. The SPS with m = 4 showed a drastic improvement in photoluminescence intensity of order of two compared to an InGaAs ternary layer. However, the SPS with a large value of m (m ≥ 6), rough surface was observed with defects, with broad and weak FT-PL spectra. The surface morphology of SPS was greatly affected by the substrate orientation. The SPS with m = 5 was grown on two degree tilted substrate from (100) direction and showed poor surface morphology as compared to the one grown on (100) exact substrate Moreover, the SPS grown on a (111)B substrate showed a rough triangular pattern with Nomarski optical microscopy. In-situ thermal annealed SPS with m = 4 showed a 18 meV increase in PL peak energy compared to the as-grown sample due to phase separation resulting from thermal interdiffusion.

Original languageEnglish
Pages (from-to)485-489
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number3
DOIs
Publication statusPublished - 1996 Mar
Externally publishedYes

Keywords

  • InAs/GaAs
  • Low pressure metalorganic chemical vapor deposition (LP-MOCVD)
  • Short period superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Oh, D. K., Suh, K. S., Choo, H., Kim, H. M., Pyun, K. E., Park, H. M., & Nahm, S. (1996). LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP. Journal of Electronic Materials, 25(3), 485-489. https://doi.org/10.1007/BF02666624