LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP

Dae Kon Oh, Kyung Soo Suh, Heungro Choo, Hong Man Kim, Kwang Eui Pyun, Hyoung Moo Park, Sahn Nahm

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

(InAs)m(GaAs)m(1 ≤ m ≤ 12) short period superlattices (SPSs) have been grown on semi-insulated InP substrates with a 200 nm InP cap layer using low pressure metalorganic chemical vapor deposition (MOCVD). According to double crystal x-ray diffraction and transmission electron microscopy results, the critical layer thickness of (InAs)m(GaAs)m SPS was observed to be ∼30Å (m = 5). For the SPS below the critical layer thickness, mirror-like surface morphology was found without defects, and strong intensity Fourier transformed photoluminescence (FT-PL) spectra were also obtained at room temperature. The SPS with m = 4 showed a drastic improvement in photoluminescence intensity of order of two compared to an InGaAs ternary layer. However, the SPS with a large value of m (m ≥ 6), rough surface was observed with defects, with broad and weak FT-PL spectra. The surface morphology of SPS was greatly affected by the substrate orientation. The SPS with m = 5 was grown on two degree tilted substrate from (100) direction and showed poor surface morphology as compared to the one grown on (100) exact substrate Moreover, the SPS grown on a (111)B substrate showed a rough triangular pattern with Nomarski optical microscopy. In-situ thermal annealed SPS with m = 4 showed a 18 meV increase in PL peak energy compared to the as-grown sample due to phase separation resulting from thermal interdiffusion.

Original languageEnglish
Pages (from-to)485-489
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number3
Publication statusPublished - 1996 Mar 1
Externally publishedYes

Fingerprint

Superlattices
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
superlattices
Surface morphology
Substrates
Photoluminescence
photoluminescence
indium arsenide
gallium arsenide
Low pressure chemical vapor deposition
Defects
defects
caps
Phase separation
Optical microscopy
Mirrors
x ray diffraction
low pressure
Diffraction

Keywords

  • InAs/GaAs
  • Low pressure metalorganic chemical vapor deposition (LP-MOCVD)
  • Short period superlattices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Oh, D. K., Suh, K. S., Choo, H., Kim, H. M., Pyun, K. E., Park, H. M., & Nahm, S. (1996). LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP. Journal of Electronic Materials, 25(3), 485-489.

LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP. / Oh, Dae Kon; Suh, Kyung Soo; Choo, Heungro; Kim, Hong Man; Pyun, Kwang Eui; Park, Hyoung Moo; Nahm, Sahn.

In: Journal of Electronic Materials, Vol. 25, No. 3, 01.03.1996, p. 485-489.

Research output: Contribution to journalArticle

Oh, DK, Suh, KS, Choo, H, Kim, HM, Pyun, KE, Park, HM & Nahm, S 1996, 'LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP', Journal of Electronic Materials, vol. 25, no. 3, pp. 485-489.
Oh DK, Suh KS, Choo H, Kim HM, Pyun KE, Park HM et al. LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP. Journal of Electronic Materials. 1996 Mar 1;25(3):485-489.
Oh, Dae Kon ; Suh, Kyung Soo ; Choo, Heungro ; Kim, Hong Man ; Pyun, Kwang Eui ; Park, Hyoung Moo ; Nahm, Sahn. / LP-MOCVD grown (InAs)m(GaAs)m short period superlattices on InP. In: Journal of Electronic Materials. 1996 ; Vol. 25, No. 3. pp. 485-489.
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abstract = "(InAs)m(GaAs)m(1 ≤ m ≤ 12) short period superlattices (SPSs) have been grown on semi-insulated InP substrates with a 200 nm InP cap layer using low pressure metalorganic chemical vapor deposition (MOCVD). According to double crystal x-ray diffraction and transmission electron microscopy results, the critical layer thickness of (InAs)m(GaAs)m SPS was observed to be ∼30{\AA} (m = 5). For the SPS below the critical layer thickness, mirror-like surface morphology was found without defects, and strong intensity Fourier transformed photoluminescence (FT-PL) spectra were also obtained at room temperature. The SPS with m = 4 showed a drastic improvement in photoluminescence intensity of order of two compared to an InGaAs ternary layer. However, the SPS with a large value of m (m ≥ 6), rough surface was observed with defects, with broad and weak FT-PL spectra. The surface morphology of SPS was greatly affected by the substrate orientation. The SPS with m = 5 was grown on two degree tilted substrate from (100) direction and showed poor surface morphology as compared to the one grown on (100) exact substrate Moreover, the SPS grown on a (111)B substrate showed a rough triangular pattern with Nomarski optical microscopy. In-situ thermal annealed SPS with m = 4 showed a 18 meV increase in PL peak energy compared to the as-grown sample due to phase separation resulting from thermal interdiffusion.",
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AU - Park, Hyoung Moo

AU - Nahm, Sahn

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N2 - (InAs)m(GaAs)m(1 ≤ m ≤ 12) short period superlattices (SPSs) have been grown on semi-insulated InP substrates with a 200 nm InP cap layer using low pressure metalorganic chemical vapor deposition (MOCVD). According to double crystal x-ray diffraction and transmission electron microscopy results, the critical layer thickness of (InAs)m(GaAs)m SPS was observed to be ∼30Å (m = 5). For the SPS below the critical layer thickness, mirror-like surface morphology was found without defects, and strong intensity Fourier transformed photoluminescence (FT-PL) spectra were also obtained at room temperature. The SPS with m = 4 showed a drastic improvement in photoluminescence intensity of order of two compared to an InGaAs ternary layer. However, the SPS with a large value of m (m ≥ 6), rough surface was observed with defects, with broad and weak FT-PL spectra. The surface morphology of SPS was greatly affected by the substrate orientation. The SPS with m = 5 was grown on two degree tilted substrate from (100) direction and showed poor surface morphology as compared to the one grown on (100) exact substrate Moreover, the SPS grown on a (111)B substrate showed a rough triangular pattern with Nomarski optical microscopy. In-situ thermal annealed SPS with m = 4 showed a 18 meV increase in PL peak energy compared to the as-grown sample due to phase separation resulting from thermal interdiffusion.

AB - (InAs)m(GaAs)m(1 ≤ m ≤ 12) short period superlattices (SPSs) have been grown on semi-insulated InP substrates with a 200 nm InP cap layer using low pressure metalorganic chemical vapor deposition (MOCVD). According to double crystal x-ray diffraction and transmission electron microscopy results, the critical layer thickness of (InAs)m(GaAs)m SPS was observed to be ∼30Å (m = 5). For the SPS below the critical layer thickness, mirror-like surface morphology was found without defects, and strong intensity Fourier transformed photoluminescence (FT-PL) spectra were also obtained at room temperature. The SPS with m = 4 showed a drastic improvement in photoluminescence intensity of order of two compared to an InGaAs ternary layer. However, the SPS with a large value of m (m ≥ 6), rough surface was observed with defects, with broad and weak FT-PL spectra. The surface morphology of SPS was greatly affected by the substrate orientation. The SPS with m = 5 was grown on two degree tilted substrate from (100) direction and showed poor surface morphology as compared to the one grown on (100) exact substrate Moreover, the SPS grown on a (111)B substrate showed a rough triangular pattern with Nomarski optical microscopy. In-situ thermal annealed SPS with m = 4 showed a 18 meV increase in PL peak energy compared to the as-grown sample due to phase separation resulting from thermal interdiffusion.

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