Luminescence of Er-doped amorphous silicon quantum dots

Nae Man Park, Tae Youb Kim, Sang Hyeob Kim, Gun Yong Sung, Baek Hyun Kim, Seong Ju Park, Kwan Sik Cho, Jung H. Shin, Jung Kun Lee, Michael Nastasi

Research output: Contribution to journalConference article

Abstract

The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other Er ions. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. However, the hydrogenation is considered to suppress this Er-Er interaction.

Original languageEnglish
Pages (from-to)60-65
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5361
DOIs
Publication statusPublished - 2004 Aug 17
Externally publishedYes

Fingerprint

Amorphous Silicon
Luminescence
Quantum Dots
Amorphous silicon
Semiconductor quantum dots
amorphous silicon
quantum dots
Ions
luminescence
ions
Photoluminescence
Surface area
Interaction
Hydrogenation
hydrogenation
Cross section
Excitation
interactions
photoluminescence
cross sections

Keywords

  • a-Si QD
  • Er
  • Hydrogeation effect
  • Size effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Luminescence of Er-doped amorphous silicon quantum dots. / Park, Nae Man; Kim, Tae Youb; Kim, Sang Hyeob; Sung, Gun Yong; Kim, Baek Hyun; Park, Seong Ju; Cho, Kwan Sik; Shin, Jung H.; Lee, Jung Kun; Nastasi, Michael.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5361, 17.08.2004, p. 60-65.

Research output: Contribution to journalConference article

Park, NM, Kim, TY, Kim, SH, Sung, GY, Kim, BH, Park, SJ, Cho, KS, Shin, JH, Lee, JK & Nastasi, M 2004, 'Luminescence of Er-doped amorphous silicon quantum dots', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5361, pp. 60-65. https://doi.org/10.1117/12.528148
Park, Nae Man ; Kim, Tae Youb ; Kim, Sang Hyeob ; Sung, Gun Yong ; Kim, Baek Hyun ; Park, Seong Ju ; Cho, Kwan Sik ; Shin, Jung H. ; Lee, Jung Kun ; Nastasi, Michael. / Luminescence of Er-doped amorphous silicon quantum dots. In: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; Vol. 5361. pp. 60-65.
@article{b280ef74b4e241fc9b35b3526dacc2d1,
title = "Luminescence of Er-doped amorphous silicon quantum dots",
abstract = "The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other Er ions. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. However, the hydrogenation is considered to suppress this Er-Er interaction.",
keywords = "a-Si QD, Er, Hydrogeation effect, Size effect",
author = "Park, {Nae Man} and Kim, {Tae Youb} and Kim, {Sang Hyeob} and Sung, {Gun Yong} and Kim, {Baek Hyun} and Park, {Seong Ju} and Cho, {Kwan Sik} and Shin, {Jung H.} and Lee, {Jung Kun} and Michael Nastasi",
year = "2004",
month = "8",
day = "17",
doi = "10.1117/12.528148",
language = "English",
volume = "5361",
pages = "60--65",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - Luminescence of Er-doped amorphous silicon quantum dots

AU - Park, Nae Man

AU - Kim, Tae Youb

AU - Kim, Sang Hyeob

AU - Sung, Gun Yong

AU - Kim, Baek Hyun

AU - Park, Seong Ju

AU - Cho, Kwan Sik

AU - Shin, Jung H.

AU - Lee, Jung Kun

AU - Nastasi, Michael

PY - 2004/8/17

Y1 - 2004/8/17

N2 - The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other Er ions. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. However, the hydrogenation is considered to suppress this Er-Er interaction.

AB - The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other Er ions. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. However, the hydrogenation is considered to suppress this Er-Er interaction.

KW - a-Si QD

KW - Er

KW - Hydrogeation effect

KW - Size effect

UR - http://www.scopus.com/inward/record.url?scp=3543050135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3543050135&partnerID=8YFLogxK

U2 - 10.1117/12.528148

DO - 10.1117/12.528148

M3 - Conference article

VL - 5361

SP - 60

EP - 65

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -