Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma

B. P. Gila, A. H. Onstine, Ji Hyun Kim, K. K. Allums, F. Ren, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Gas source molecular beam epitaxy was used to grow magnesium oxide gate dielectrics on GaN using elemental Mg and atomic oxygen supplied by an electron cyclotron resonance (ECR) plasma. The oxide grown at 350°C was found to be single crystal, whereas at 100°C the substrate was mostly polycrystalline. The polycrystalline MgO film was found to be highly oriented towards the (111) direction. The polycrystalline magnesium oxide/GaN heterostructure was also found to have a breakdown field of 2.3 MV/cm and an interface state density of 4×10 11 cm -2 eV -1.

Original languageEnglish
Pages (from-to)2368-2370
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - 2003 Nov 1
Externally publishedYes

Fingerprint

Electron cyclotron resonance
magnesium oxides
Gate dielectrics
Magnesia
electron cyclotron resonance
Gas source molecular beam epitaxy
Plasmas
Interface states
Heterojunctions
molecular beam epitaxy
breakdown
Single crystals
Oxides
Oxygen
oxides
single crystals
oxygen
Substrates
gases

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma. / Gila, B. P.; Onstine, A. H.; Kim, Ji Hyun; Allums, K. K.; Ren, F.; Abernathy, C. R.; Pearton, S. J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 01.11.2003, p. 2368-2370.

Research output: Contribution to journalArticle

Gila, B. P. ; Onstine, A. H. ; Kim, Ji Hyun ; Allums, K. K. ; Ren, F. ; Abernathy, C. R. ; Pearton, S. J. / Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 6. pp. 2368-2370.
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