Gas source molecular beam epitaxy was used to grow magnesium oxide gate dielectrics on GaN using elemental Mg and atomic oxygen supplied by an electron cyclotron resonance (ECR) plasma. The oxide grown at 350°C was found to be single crystal, whereas at 100°C the substrate was mostly polycrystalline. The polycrystalline MgO film was found to be highly oriented towards the (111) direction. The polycrystalline magnesium oxide/GaN heterostructure was also found to have a breakdown field of 2.3 MV/cm and an interface state density of 4×10 11 cm -2 eV -1.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Nov 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering